Graded band-gap Cu(In,Ga)Se[sub 2] thin-film solar cell absorber with enhanced open-circuit voltage

Journal Article · Mon Sep 27 00:00:00 EDT 1993 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.110675· OSTI ID:6010902

Contreras, M; Tuttle, J; Du, D; Qi, Y; Swartzlander, A; Tennant, A; Noufi, R ^[1]

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1. National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401 (United States)

An important development in polycrystalline Cu(In,Ga)Se[sub 2] (CIGS) thin-film photovoltaic solar cells is the attainment of a high voltage device simultaneous with state-of-the-art conversion efficiency. This letter describes a CIGS-based solar cell that demonstrates an open-circuit voltage ([ital V][sub oc]) approaching 700 mV and a total-area conversion efficiency of 12.2%. The high value of [ital V][sub oc] was achieved by grading In/Ga through the absorber by a computer-controlled physical vapor deposition (PVD) process that utilizes variable metal fluxes.

• DOE Contract Number: AC02-83CH10093
• OSTI ID: 6010902
• Journal Information: Applied Physics Letters; (United States), Vol. 63:13; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
SOLAR CELLS
DESIGN
COPPER SELENIDES
EFFICIENCY
GALLIUM SELENIDES
GRADED BAND GAPS
INDIUM SELENIDES
PHOTOVOLTAIC EFFECT
PHYSICAL VAPOR DEPOSITION
THIN FILMS
CHALCOGENIDES
COPPER COMPOUNDS
DEPOSITION
DIRECT ENERGY CONVERTERS
EQUIPMENT
FILMS
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
PHOTOELECTRIC CELLS
PHOTOELECTROMAGNETIC EFFECTS
PHOTOVOLTAIC CELLS
SELENIDES
SELENIUM COMPOUNDS
SOLAR EQUIPMENT
SURFACE COATING
TRANSITION ELEMENT COMPOUNDS
140501* - Solar Energy Conversion- Photovoltaic Conversion