Gain uniformity of InP/InGaAsP/InGaAs avalanche photodiodes with separate absorption, grading, and multiplication regions

Journal Article · Sun Sep 01 00:00:00 EDT 1985 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1985.1072848· OSTI ID:6009508

Holden, W S; Campbell, J C; Dental, A G

We report on the spatial uniformity of the gain M of InP/ InGaAsP/InGaAs avalanche photodiodes with separate absorption, grading, and multiplication regions (SAGM-APD's). Typically, these APD's exhibit less than 10 percent variation in the gain (for M less than or equal to 10) over the entire photosensitive area. The small nonuniformity which is observed shows a one-to-one correspondence with inhomogeneities in the epitaxial layers of the SAGM-APD structure. We also observe a reduction in the effective photosensitive diameter with increasing bias voltage.

• Research Organization: ATandT Bell Laboratories, Holmdel, NJ
• OSTI ID: 6009508
• Journal Information: IEEE J. Quant. Electron.; (United States), Vol. GE-21:9
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
PHOTODIODES
GAIN
ABSORPTION
ELECTRIC POTENTIAL
GALLIUM ARSENIDES
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM PHOSPHIDES
PERFORMANCE
PHOTOSENSITIVITY
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SENSITIVITY
420300* - Engineering- Lasers- (-1989)