Lattice site locations of excess arsenic atoms in gallium arsenide grown by low-temperature molecular beam epitaxy
- Center for Advanced Materials, Materials Sciences Division, Lawrence Berkeley Laboratory,Berkeley, California (USA)
The excess As atoms present in as-grown GaAs buffer layers grown by molecular beam epitaxy at low substrate temperature ({similar to}200 {degree}C) was measured by particle induced x-ray emission to be {similar to}4{times}10{sup 20} atoms/cm{sup 3}. The lattice site location of these excess As atoms in the layer was studied by ion channeling methods. Our results strongly suggested that the excess As atoms are located in an interstitial position close to the substitutional As atoms with a projected displacement {similar to}0.3 A into the {l angle}110{r angle} channel. These results are consistent with the {l angle}111{r angle} split interstitials model suggested from TEM results. After annealing at 600 {degree}C these excess As atoms coalesce forming As precipitates.
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 5993202
- Journal Information:
- Applied Physics Letters; (United States), Vol. 59:25; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Investigation on the lattice site location of the excess arsenic atoms in GaAs layers grown by low temperature molecular beam epitaxy
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Related Subjects
GALLIUM ARSENIDES
INTERSTITIALS
ANNEALING
ARSENIC ADDITIONS
ION CHANNELING
MOLECULAR BEAM EPITAXY
PRECIPITATION
X-RAY EMISSION ANALYSIS
ALLOYS
ARSENIC ALLOYS
ARSENIC COMPOUNDS
ARSENIDES
CHANNELING
CHEMICAL ANALYSIS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
EPITAXY
GALLIUM COMPOUNDS
HEAT TREATMENTS
NONDESTRUCTIVE ANALYSIS
PNICTIDES
POINT DEFECTS
SEPARATION PROCESSES
360602* - Other Materials- Structure & Phase Studies