Amorphous silicon thin films heterojunction solar cells. Second quarterly progress report, January 31-March 31, 1979

doi:10.2172/5990043

Abstract

A full description is given of a glow discharge deposition system, as well as a schematic. A growth rate of 2 to 3 A/sec is reported across a total substrate diameter of 76 mm, and films of a-Si:H free of oxygen and carbon contaminants have been obtained. Other films deposited include: doped and undoped a-Si:H and a-Si/sub x/C/sub 1-x/:H, n-i-p, a-Si:H plus n-i-p, a-Si:H plus a-Si/xub x/C/sub 1-x/. Optical transmission measurements from .35 to 50 microns wavelength were made on these films. A significant difference found in the vibrational spectra is the shift of the major stretching mode from 2000 cm/sup -1/ for a-Si:H to 2100 cm/sup -1/ for the a-SiC:H. A strong broad band centered at 1000 cm/sup -1/ appears when carbon is present. (LEW)

Preparation and characterization of hydrogenated amorphous silicon thin films and thin film solar cells produced by ion plating techniques. First quarterly progress report, January 1, 1979--March 31, 1979

Not Available April 1979

A review of the ion plating deposition process, in which evaporation of a metal or semiconductor into a glow discharge is used to affect the character and surface bonding of the resulting thin film, is given. It is noted that ion plating increases the adhesion in the substrate of implanted films compared to evaporated or sputtered films. This greater adhesion allows a greater choice of substrate materials, deposition rates approaching those produced by simple vacuum evaporation methods, and the option of doping. Experimental results of the effect of magnetic fields on film deposition rates can be more than doubled bymore »« less
Preparation and characterization of hydrogenated amorphous silicon thin films and thin film solar cells produced by ion plating techniques. First quarterly progress report, 1 January 1979-31 March 1979

Cocks, F H ; Jones, P L ; Dimmey, L J January 1979

The development of methods for the preparation of efficient, low cost amorphous thin film solar cells involving the direct use of the ion plating technique is described. Progress is reported. (WHK)
DOI: 10.2172/6661085

Full Text Available
Preparation and characterization of hydrogenated amorphous boron thin films and thin film solar cells produced by glow discharge decomposition methods. First quarterly report, January 1, 1979-March 31, 1979

Cocks, F H ; Jones, P L ; Dimmey, L J April 1979

The energy gap of unhydrogenated amorphous boron is approximately 1.35 eV and therefore the theoretical maximum efficiency for amorphous boron solar cells is approximately 25%. However, in exact analogy with the situation previously existing for amorphous silicon, amorphous boron, without hydrogenation, has poor semiconducting properties due to defect states in the band gap. Large area amorphous boron films can be readily produced by either chemical vapor deposition or pyrolysis of diborane or boron tribromide. Such films do not contain more than minute quantities of hydrogen, however, due to the high (1000/sup 0/C) pyrolysis temperatures required. The substrate temperature during glowmore »« less
DOI: 10.2172/5964759

Full Text Available
Preparation and characterization of hydrogenated amorphous silicon thin films and thin film solar cells produced by ion plating techniques. Second quarterly progress report, 1 April 1979-30 Jun 1979

Cocks, F H ; Jones, P L ; Dimmey, L September 1979

Using quartz substrates, hydrogenated a-Si thin films have now been produced both by flow discharge decomposition of silane and by the controlled ion plating of high purity silicon through flow discharges composed of silane, hydrogen, and argon using a modified Takagi apparatus. Thus far, thin films produced by both glow discharge decomposition of silane with and without magnetic confinement and by ion plating have been characterized and compared using x-ray diffractometry, infrared spectrometry, optical absorption spectroscopy and by their temperature dependence of resistivity. Based on these results, the ion plating technique of producing a-Si thin films looks extremely encouraging. Filmsmore »« less
DOI: 10.2172/5949198

Full Text Available
Preparation and characterization of hydrogenated amorphous silicon thin films and thin film solar cells produced by ion plating techniques. Second quarterly progress report, 1 April-30 June 1979

Cocks, F H ; Jones, P L ; Dimmey, L September 1979

Using quartz substrates, hydrogenated a-Si thin films have now been produced both by glow discharge decomposition of silane and by the controlled ion plating of high purity through glow discharges composed of silane, hydrogen, and argon using a modified Takagi apparatus. Thus far, thin films produced by both glow discharge decomposition of silane with and without magnetic confinement and by ion plating have been characterized and compared using x-ray deffractometry, infrared spectroscopy, optical absorption spectroscopy and by their temperature dependence of resistivity. Based on these results, the ion plating technique of producing a-Si thin films looks extremely encouraging. Films havemore »« less
DOI: 10.2172/5758073

Full Text Available

Title: Amorphous silicon thin films heterojunction solar cells. Second quarterly progress report, January 31-March 31, 1979

Abstract

Citation Formats

Preparation and characterization of hydrogenated amorphous silicon thin films and thin film solar cells produced by ion plating techniques. First quarterly progress report, January 1, 1979--March 31, 1979

Preparation and characterization of hydrogenated amorphous silicon thin films and thin film solar cells produced by ion plating techniques. First quarterly progress report, 1 January 1979-31 March 1979

Preparation and characterization of hydrogenated amorphous boron thin films and thin film solar cells produced by glow discharge decomposition methods. First quarterly report, January 1, 1979-March 31, 1979

Preparation and characterization of hydrogenated amorphous silicon thin films and thin film solar cells produced by ion plating techniques. Second quarterly progress report, 1 April 1979-30 Jun 1979

Preparation and characterization of hydrogenated amorphous silicon thin films and thin film solar cells produced by ion plating techniques. Second quarterly progress report, 1 April-30 June 1979