Comparison of analytical models and experimental results for single-event upset in CMOS SRAMs
In an effort to design fully radiation-hardened memories for satellite and deep-space applications, a 16K and a 2K CMOS static RAM were modeled for single-particle upset during the design stage. The modeling resulted in the addition of a hardening feedback resistor in the 16K remained tentatively unaltered. Subsequent experiments, using the Lawrence Berkeley Laboratories' 88-inch cyclotron to accelerate krypton and oxygen ions, established an upset threshold for the 2K and the 16K without resistance added, as well as a hardening threshold for the 16K with feedback resistance added. Results for the 16K showed it to be hardenable to the higher level than previously published data for other unhardened 16K RAMs. The data agreed fairly well with the modeling results; however, a close look suggests that modification of the simulation methodology is required to accurately predict the resistance necessary to harden the RAM cell.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA); North Carolina State Univ., Raleigh (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 5988013
- Report Number(s):
- SAND-83-1433C; CONF-830714-6; ON: DE83013990
- Resource Relation:
- Conference: 20. IEEE annual conference on nuclear and space radiation effects, Gatlinburg, TN, USA, 18 Jul 1983; Other Information: Portions are illegible in microfiche products
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING
SEMICONDUCTOR STORAGE DEVICES
PHYSICAL RADIATION EFFECTS
CHARGE COLLECTION
COMPUTERIZED SIMULATION
KRYPTON IONS
MATHEMATICAL MODELS
OXYGEN IONS
RESISTORS
CHARGED PARTICLES
ELECTRICAL EQUIPMENT
EQUIPMENT
IONS
MEMORY DEVICES
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SIMULATION
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems
420800 - Engineering- Electronic Circuits & Devices- (-1989)