skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Solar cell having improved front surface metallization

Patent ·
OSTI ID:5987433

This patent describes a solar cell comprising: a first layer of gallium arsenide semiconductor material of an N+ conductivity; a second layer of gallium arsenide semiconductor material of an N conductivity overlying the first layer; a third layer of gallium arsenide semiconductor material of a P conductivity overlying the N conductivity layer and forming a P-N junction therebetween. A layer of aluminium gallium arsenide semiconductor material of a p conductivity overlying the front major surface of the P conductivity third layer and having an exposed surface essentially parallel to the front major surface and at least one edge; a plurality of metallic contact lines made of a first metal alloy composition and being spaced apart by a first predetermined distance traversing the exposed surface and extending through the aluminium gallium arsenide layer to the front major surface and making electrical contact to the third layer; a plurality of longitudinally disposed metallic grid lines made of a second metal alloy composition and being spaced apart by a second predetermined distance located on the exposed surface of the aluminium gallium arsenide layer and which cross the metallic contact lines and make electrical contact to the metallic lines; a flat metallic strip disposed on the aluminium gallium arsenide layer exposed surface near the edge, the strip electrically coupling the metallic grid lines to one another; and a back contact located on the back major surface.

Assignee:
Spectrolab, Inc., Sylmar, CA
Patent Number(s):
US 4694115
OSTI ID:
5987433
Resource Relation:
Patent File Date: Filed date 4 Nov 1986
Country of Publication:
United States
Language:
English