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Title: Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier

Abstract

A Schottky barrier amorphous silicon solar cell incorporating a thin highly doped p-type region of hydrogenated amorphous silicon disposed between a Schottky barrier high work function metal and the intrinsic region of hydrogenated amorphous silicon is described. The high work function metal and thin highly doped p-type region forms a surface barrier junction with the intrinsic amorphous silicon layer. The thickness and concentration of p-type dopants in said p-type region are selected so that said p-type region is fully ionized by the Schottky barrier high work function metal. The thin highly doped p-type region has been found to increase the open circuit voltage and current of the photovoltaic device.

Inventors:
;
Publication Date:
OSTI Identifier:
5987204
Patent Number(s):
US 4163677
Assignee:
RCA Corp.
Resource Type:
Patent
Resource Relation:
Patent File Date: Filed date 28 Apr 1978
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; SILICON SOLAR CELLS; FABRICATION; AMORPHOUS STATE; DESIGN; GLOW DISCHARGES; P-TYPE CONDUCTORS; SCHOTTKY BARRIER DIODES; THICKNESS; DIMENSIONS; DIRECT ENERGY CONVERTERS; ELECTRIC DISCHARGES; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR MATERIALS; SOLAR CELLS; 140501* - Solar Energy Conversion- Photovoltaic Conversion

Citation Formats

Carlson, D E, and Wronski, C R. Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier. United States: N. p., 1979. Web.
Carlson, D E, & Wronski, C R. Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier. United States.
Carlson, D E, and Wronski, C R. 1979. "Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier". United States.
@article{osti_5987204,
title = {Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier},
author = {Carlson, D E and Wronski, C R},
abstractNote = {A Schottky barrier amorphous silicon solar cell incorporating a thin highly doped p-type region of hydrogenated amorphous silicon disposed between a Schottky barrier high work function metal and the intrinsic region of hydrogenated amorphous silicon is described. The high work function metal and thin highly doped p-type region forms a surface barrier junction with the intrinsic amorphous silicon layer. The thickness and concentration of p-type dopants in said p-type region are selected so that said p-type region is fully ionized by the Schottky barrier high work function metal. The thin highly doped p-type region has been found to increase the open circuit voltage and current of the photovoltaic device.},
doi = {},
url = {https://www.osti.gov/biblio/5987204}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1979},
month = {8}
}