Effects of boron profiles on the open circuit voltage of p-i-n and n-i-p amorphous silicon solar cells

Journal Article · Mon Jun 02 00:00:00 EDT 1986 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.96861· OSTI ID:5984425

Jeffrey, F R; Vernstrom, G D

Data are presented showing that boron carryover into the i layer is responsible for the commonly observed difference in open circuit voltage between p-i-n and n-i-p amorphous silicon solar cells. It is proposed that the lower voltage samples are being limited by surface recombination at the p/i interface and that boron carryover reduces this recombination current. The V/sub oc/ is then able to rise to the point where it is limited by the bulk recombination current.

• Research Organization: E and I Sector Laboratory, 3M Center, St. Paul, Minnesota 55144
• OSTI ID: 5984425
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 48:22
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
SILICON SOLAR CELLS
ELECTRIC POTENTIAL
IMPURITIES
BORON
ELECTRIC CURRENTS
INTERFACES
P-N JUNCTIONS
RECOMBINATION
CURRENTS
DIRECT ENERGY CONVERTERS
ELEMENTS
EQUIPMENT
JUNCTIONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SOLAR CELLS
SOLAR EQUIPMENT
140501* - Solar Energy Conversion- Photovoltaic Conversion