Shallow junction formation in As-implanted Si by low-temperature rapid thermal annealing

Conference · Tue Aug 01 00:00:00 EDT 1989

OSTI ID:5980867

El-Ghor, M K; Pennycook, S J; Zuhr, R A

Shallow junctions were formed in single-crystal Si(100) by implantation of As at energies between 2 and 17.5 keV followed by conventional furnace annealing or by rapid thermal annealing (RTA). Cross-sectional transmission electron microscopy (XTEM) showed that defect-free shallow junctions could be formed at temperatures as low as 700/degree/C by RTA, with about 60% dopant activation. From a comparison of short-time and long-time annealing, it is proposed that surface image forces are responsible for the efficient removal of end-of-range (EOR) dislocation loops. 25 refs., 5 figs., 1 tab.

• Research Organization: Oak Ridge National Lab., TN (USA)
• DOE Contract Number: AC05-84OR21400
• OSTI ID: 5980867
• Report Number(s): CONF-890426-28; ON: DE89015970
• Resource Relation: Conference: Spring meeting of the Materials Research Society, San Diego, CA, USA, 24-28 Apr 1989; Other Information: Portions of this document are illegible in microfiche products
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
JUNCTIONS
SILICON
ION IMPLANTATION
ANNEALING
ARSENIC IONS
DEFECTS
MICROSTRUCTURE
CHARGED PARTICLES
CRYSTAL STRUCTURE
ELEMENTS
HEAT TREATMENTS
IONS
SEMIMETALS
360101* - Metals & Alloys- Preparation & Fabrication
656003 - Condensed Matter Physics- Interactions between Beams & Condensed Matter- (1987-)