Study of perfection of layers of AlGaSb(As) solid solution
Studies have been carried out on the perfection of the n-Al/sub x/Ga/sub 1/minus/x/Sb/sub 1/minus/y/As/sub y/ (0.12 /le//chi//le/0.26) layer grown on GaSb substrates under different conditions of lattice matching. During the relaxation of the mechanical stresses at first a system of tilt dislocations with a density of up to 5/centered dot/10/sup 5/ cm/sup /minus/2/ is formed while in thick layers (h /yield/ 20 /mu/m) a network of misfit dislocations parallel to the heteroboundary is formed. The time required to dissolve a weighed amount of GaAs in the melt is shown to be of major importance for obtaining layers of a solid solution that are isoperiodic with the substrate. The entry of arsenic only in the initial portion of the epitaxial layer can reduce the dislocation density in the layer without decreasing the measured value of /Delta/a. Dissolution of a weighed amount of GaAs in a Ga + Sb melt for two hours at T = 730-750/degree/C is sufficient to obtain layers of Al/sub x/Ga/sub 1/minus/x/Sb/sub 1/minus/y/As/sub y/ solid solution that are isoperiodic with the substrate.
- Research Organization:
- Tomsk Univ. (USSR)
- OSTI ID:
- 5978217
- Journal Information:
- Sov. Phys. J. (Engl. Transl.); (United States), Vol. 31:1; Other Information: Translated from Izv. Vyssh. Uchebn. Zaved., Fiz.; 31: No. 1, 84-89(Jan 1987)
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ALUMINIUM ARSENIDES
CRYSTAL LATTICES
ANTIMONY COMPOUNDS
GALLIUM ARSENIDES
ANTIMONY TELLURIDES
DISLOCATIONS
GALLIUM TELLURIDES
HETEROJUNCTIONS
LIQUID PHASE EPITAXY
OPTIMIZATION
SOLID SOLUTIONS
SUBSTRATES
X-RAY DIFFRACTION
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
COHERENT SCATTERING
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DIFFRACTION
DISPERSIONS
EPITAXY
GALLIUM COMPOUNDS
JUNCTIONS
LINE DEFECTS
MIXTURES
PNICTIDES
SCATTERING
SEMICONDUCTOR JUNCTIONS
SOLUTIONS
TELLURIDES
TELLURIUM COMPOUNDS
360602* - Other Materials- Structure & Phase Studies