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Title: Diffusion of Ni, Ga, and As in the surface layer of GaAs and characteristics of the Ni/GaAs contact

Journal Article · · Inorg. Mater. (Engl. Transl.); (United States)
OSTI ID:5974496

The authors investigate the low-temperature codiffusion of Ni, Ga, and As in the surface layer of gallium arsenide and study its effect on the current-voltage characteristics of a Ni/GaAs rectifier contact. The concentration distribution of atoms in the function layer of a Ni-GaAs system was investigated by the methods of layerwise radiometric and neutron-activation analyses. It was found that interdiffusion of components takes place in the Ni-GaAs system in an elastic stress field, generated by the differences in the lattice parameters and thermal-expansion coefficients of Ni, GaAs, and the intermetallic compound which form. The form and parameters of the current-voltage characteristics of a Ni/GaAs contact are determined by the phase composition and the structure of the junction layer.

Research Organization:
N. I. Lobachevskii For'kii State Univ., USSR
OSTI ID:
5974496
Journal Information:
Inorg. Mater. (Engl. Transl.); (United States), Vol. 23:2; Other Information: Translated from Izv. Akad. Nauk SSSR, Neorg. Mater.; 23: No. 2, 186-189(Feb 1987)
Country of Publication:
United States
Language:
English

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