Solid-state device for detecting and locating the points of impact of ionizing radiation

Patent · Tue Apr 03 00:00:00 EST 1979

OSTI ID:5968824

Rougeot, H; Roziere, G

A semiconductor body contains microscopic passages in which multiplication of the free electrons appearing at the entrances to said passages, under the effect of the incident ionizing radiation, takes place. A conductive film forms a surface barrier in conjunction with the semiconductor body which is endowed with the property of secondary emission with an emission coefficient better than unity.

• Assignee: Thomson-CSF
• Patent Number(s): US 4147933
• Application Number: TRN: 79-020102
• OSTI ID: 5968824
• Resource Relation: Patent Priority Date: Priority date 14 May 1976, France
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
SURFACE BARRIER DETECTORS
SPATIAL RESOLUTION
DESIGN
MEASURING INSTRUMENTS
RADIATION DETECTORS
RESOLUTION
SEMICONDUCTOR DETECTORS
440101* - Radiation Instrumentation- General Detectors or Monitors & Radiometric Instruments