Method for high resolution lithography
A method for performing high resolution lithography. The first step involves disposing on a substructure having a surface layer to be patterned a layer of a resist material characterized by both substantial degradation sensitivity for incident ionizing radiation of a predetermined type and substantial instability of undegraded regions for a predetermined plasma etchant which attacks the surface layer. The next step is to expose a prearranged pattern of regions of the resist layer to the predetermined type of radiation to produce a corresponding pattern of degraded resist regions. Then the pattern of degraded resist regions is removed using a preselected developing solution. The next step is to modify the resist material to increase the stability thereof for the plasma etchant by exposing the developed resist layer to ionizing radiation of a type which has been predetermined to degrade the resist material and then baking the degraded resist layer. The final step is to etch the exposed regions of the surface layer using said plasma etchant.
- Assignee:
- Amdahl Corporation
- Patent Number(s):
- US 4476216
- Application Number:
- TRN: 85-007877
- OSTI ID:
- 5964467
- Resource Relation:
- Patent File Date: Filed date 9 Aug 1983; Other Information: PAT-APPL-521941
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
INTEGRATED CIRCUITS
FABRICATION
MASKING
SEMICONDUCTOR MATERIALS
SURFACE TREATMENTS
ELECTRIC CONDUCTIVITY
ELECTRON BEAMS
ETCHING
PLASMA
SUBSTRATES
TRANSISTORS
BEAMS
ELECTRICAL PROPERTIES
ELECTRONIC CIRCUITS
LEPTON BEAMS
MATERIALS
MICROELECTRONIC CIRCUITS
PARTICLE BEAMS
PHYSICAL PROPERTIES
SEMICONDUCTOR DEVICES
SURFACE FINISHING
420800* - Engineering- Electronic Circuits & Devices- (-1989)
360601 - Other Materials- Preparation & Manufacture