Characterization of boron-implanted silicon at various depths from the surface by Raman scattering

Journal Article · Mon Apr 01 00:00:00 EST 1985 · J. Electrochem. Soc.; (United States)

DOI:https://doi.org/10.1149/1.2113999· OSTI ID:5953781

Wong, P T.T.; Simard-Normandin, M

The preparation of a VLSI CMOS process implies the fabrication of p/sup +/n junctions with junction depths of the order of 0.25 ..mu... These junctions are usualy fabricated by the implantation of boron or boron difluoride and annealed at high temperatures to activate the species and restore the implantation damage. Since boron diffuses very fast in silicon because of its light mass, the annealing times are shortened and new methods of annealing are implemented (laser, flashlamp, etc.). This can result in incompletely activated dopant if the annealing parameters have not been adequately chosen. Raman scattering is an attractive method of characterizing boron-implanted silicon, allowing simultaneous measurement of the free-carrier concentration and the measurement of the number of impurities in substitutional position. It can also detect the presence of amorphous silicon, thus giving another measure of the effectiveness of the annealing cycle. In this paper, we report Raman scattering measurements of low energy boron-implanted silicon at several depths from the surface and compare the results with the concentration profile obtained by secondary ion mass spectrometry (SIMS) techniques.

• Research Organization: National Research Council of Canada, Division of Chemistry, Ottawa
• OSTI ID: 5953781
• Journal Information: J. Electrochem. Soc.; (United States), Vol. 132:4
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BORON
ION IMPLANTATION
BORON FLUORIDES
P-N JUNCTIONS
FABRICATION
SILICON
ANNEALING
DEPTH
DIFFUSION
DOPED MATERIALS
MEASURING METHODS
RAMAN EFFECT
SCATTERING
BORON COMPOUNDS
DIMENSIONS
ELEMENTS
FLUORIDES
FLUORINE COMPOUNDS
HALIDES
HALOGEN COMPOUNDS
HEAT TREATMENTS
JUNCTIONS
MATERIALS
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
360601* - Other Materials- Preparation & Manufacture