The influence of interfacial roughness on parallel transport at oxide--semiconductor and heterojunction interfaces

Journal Article · Sat Jul 01 00:00:00 EDT 1989 · J. Vac. Sci. Technol., B; (United States)

DOI:https://doi.org/10.1116/1.584797· OSTI ID:5951710

Goodnick, S M; Lary, J E; Owen, R; Sri, O; Wilmsen, C W

Carrier scattering due to surface roughness at a nonideal interface may be an important mechanism in reducing carrier mobility and ultimately semiconductor device performance. We have investigated the role of this scattering mechanism in the low and high field transport of carriers parallel to oxide--semiconductor and heterojunction interfaces through analytic solutions and Monte Carlo simulation of the carrier dynamics. Quantitative differences between the scattering rates in the two types of systems arise from image potential contributions due to the presence of the dielectric in the oxide--semiconductor system which increases the scattering rate relative to a homogeneous system. For the InP/SiO/sub 2/ system, surface scattering limits the surface channel mobility, even at room temperature. However, from detailed Monte Carlo simulation of high field transport in /ital n/-type InP inversion layers, we find that roughness scattering plays a relatively small role in reducing the peak and saturated carrier velocities since interface scattering is elastic and decreases with electron temperature. Thus, the short channel behavior in InP metal--oxide semiconductor field effect transistors may be comparatively better than that indicated by long channel results.

• Research Organization: Department of Electrical and Computer Engineering, Center for Advanced Materials Research, Oregon State University, Corvallis, Oregon 97331(US); Department of Electrical Engineering, Colorado State University, Fort Collins, Colorado 80523
• OSTI ID: 5951710
• Journal Information: J. Vac. Sci. Technol., B; (United States), Vol. 7:4
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
INDIUM PHOSPHIDES
ELECTRIC CONDUCTIVITY
SILICATES
CARRIER MOBILITY
HETEROJUNCTIONS
INTERFACES
MONTE CARLO METHOD
ROUGHNESS
SCATTERING
SIMULATION
SURFACE PROPERTIES
ELECTRICAL PROPERTIES
INDIUM COMPOUNDS
JUNCTIONS
MOBILITY
OXYGEN COMPOUNDS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR JUNCTIONS
SILICON COMPOUNDS
360603* - Materials- Properties