High-speed and high-power 1. 3-. mu. m InGaAsP buried crescent injection lasers with semi-insulating current blocking layers

Journal Article · Mon Nov 30 00:00:00 EST 1987 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.98521· OSTI ID:5950737

Cheng, W H; Su, C B; Buehring, K D; Huang, S Y; Pooladdej, J; Wolf, D; Perrachione, D; Renner, D; Hess, K L; Zehr, S W; others, and

The fabrication and performance of high-speed and high-power 1.3-..mu..m InGaAsP buried crescent lasers with semi-insulating current blocking layers are reported. A modulation bandwidth of 11 GHz and acw output power of 42 mW/facet have been achieved. An approximate circuit model of the semi-insulating buried crescent laser, which describes the effect of dc bias on parasitic capacitance at high-speed operation, is also presented.

• Research Organization: Rockwell International Corporation, Lightwave Systems Division, Dallas, Texas 75207
• OSTI ID: 5950737
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 51:22
• Country of Publication: United States
• Language: English

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420300* - Engineering- Lasers- (-1989)