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Title: Low resistance Ohmic contacts to high-T/sub c/ superconducting thin films

Abstract

Metal contacts to high T/sub c/ superconducting thin films have been studied. By analyzing the I-V characteristics at contact junctions and by synchrotron radiation photoemission spectroscopy, the effect of contact metal and surface treatments before depositing contact metal on the metal-superconductor interface characteristics has been investigated. Low resistance ohmic contacts are realized by the following sequence of processes: (1) oxygen ion sputter etching, (2) high-pressure oxygen plasma treatment, and (3) in-situ depositing Au with no interfacial reaction to the superconductor. A low contact resistivity equal to 5.5 x 10/sup -7/ Ohm.cm/sup 1/ at 77 K is realized experimentally.

Authors:
; ; ; ;
Publication Date:
Research Org.:
9901600
OSTI Identifier:
5947871
Report Number(s):
CONF-880812-
Journal ID: CODEN: IEMGA; TRN: 89-018597
Resource Type:
Conference
Journal Name:
IEEE Trans. Magn.; (United States)
Additional Journal Information:
Journal Volume: 25:2; Conference: Applied superconductivity conference, San Francisco, CA, USA, 21-25 Aug 1988
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; SUPERCONDUCTING FILMS; SPUTTERING; ELECTRIC IMPEDANCE; ETCHING; EXPERIMENTAL DATA; HIGH PRESSURE; HIGH TEMPERATURE; INTERFACES; OXYGEN; PHOTOEMISSION; SOLID-STATE PLASMA; SUPERCONDUCTING JUNCTIONS; SYNCHROTRON RADIATION; BREMSSTRAHLUNG; DATA; ELECTROMAGNETIC RADIATION; ELEMENTS; EMISSION; FILMS; IMPEDANCE; INFORMATION; JUNCTIONS; NONMETALS; NUMERICAL DATA; PLASMA; RADIATIONS; SECONDARY EMISSION; SURFACE FINISHING; 420201* - Engineering- Cryogenic Equipment & Devices; 656003 - Condensed Matter Physics- Interactions between Beams & Condensed Matter- (1987-); 656100 - Condensed Matter Physics- Superconductivity

Citation Formats

Tazoh, Y, Aihara, K, Miyabara, K, Hohkawa, K, and Oshima, M. Low resistance Ohmic contacts to high-T/sub c/ superconducting thin films. United States: N. p., 1989. Web.
Tazoh, Y, Aihara, K, Miyabara, K, Hohkawa, K, & Oshima, M. Low resistance Ohmic contacts to high-T/sub c/ superconducting thin films. United States.
Tazoh, Y, Aihara, K, Miyabara, K, Hohkawa, K, and Oshima, M. Wed . "Low resistance Ohmic contacts to high-T/sub c/ superconducting thin films". United States.
@article{osti_5947871,
title = {Low resistance Ohmic contacts to high-T/sub c/ superconducting thin films},
author = {Tazoh, Y and Aihara, K and Miyabara, K and Hohkawa, K and Oshima, M},
abstractNote = {Metal contacts to high T/sub c/ superconducting thin films have been studied. By analyzing the I-V characteristics at contact junctions and by synchrotron radiation photoemission spectroscopy, the effect of contact metal and surface treatments before depositing contact metal on the metal-superconductor interface characteristics has been investigated. Low resistance ohmic contacts are realized by the following sequence of processes: (1) oxygen ion sputter etching, (2) high-pressure oxygen plasma treatment, and (3) in-situ depositing Au with no interfacial reaction to the superconductor. A low contact resistivity equal to 5.5 x 10/sup -7/ Ohm.cm/sup 1/ at 77 K is realized experimentally.},
doi = {},
journal = {IEEE Trans. Magn.; (United States)},
number = ,
volume = 25:2,
place = {United States},
year = {1989},
month = {3}
}

Conference:
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