Effect of macroscopic stress on accelerated aging of GaInAsP channeled substrate buried heterostructure lasers

Journal Article · Tue Aug 15 00:00:00 EDT 1989 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.344358· OSTI ID:5947106

Swaminathan, V; Koszi, L A; Focht, M W

We report the results of the measurement of radius of curvature of 1.3 and 1.5 /mu/m wavelength GaInAsP-InP channeled substrate buried heterostructure lasers. The objective of this investigation is to quantify the macroscopic stress present in the device and correlate it with device reliability. The change in dc threshold current (/Delta//ital I//sub th/) after an accelerated aging test was used as a measure to access device reliability, with high /Delta//ital I//sub th/ indicating decreased reliability. Changes were made in the /ital p/-side metallization to bring about a change in either /Delta//ital I//sub th/ or radius of curvature and they included two different contact widths and different thicknesses of the Au bonding pad. It is observed that no correlation between device curvature and /Delta//ital I//sub th/ exists even though the modifications in the /ital p/ metallization caused significant changes in both quantities. It is suggested that it is not the macroscopic device stress that is measured by the radius of curvature but localized stresses that may exist in the vicinity of the lasing active layer which would affect device reliability. It is surmised that the most important role of stress is its effect on the direction of defect migration with the principal driving force coming from the nonradiative electron-hole recombination occurring in the vicinity of the active layer.

• Research Organization: AT T Bell Laboratories, Murray Hill, New Jersey 07974(US)
• OSTI ID: 5947106
• Journal Information: J. Appl. Phys.; (United States), Vol. 66:4
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
STRESSES
AGING
CRYSTAL DEFECTS
GALLIUM ARSENIDES
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM PHOSPHIDES
MIGRATION
RECOMBINATION
RELIABILITY
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL STRUCTURE
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
LASERS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
420300* - Engineering- Lasers- (-1989)