Determination of minority carrier lifetimes in direct band-gap semiconductors by monitoring intensity-modulated luminescence radiation

Journal Article · Fri Mar 15 00:00:00 EST 1985 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.334362· OSTI ID:5941712

von Roos, O

When an extrinsic, direct band-gap semiconductor sample is irradiated by photons of an energy higher than the energy of the band gap between valence and conduction bands, excess electron-hole pairs are generated which, while diffusing through the sample, produce luminescence via radiative recombination. If, furthermore, the intensity of the impinging beam of photons is modulated sinusoidally, the luminescence radiation escaping from the sample will be phase shifted with respect to the original photon beam in a characteristic way. It will be shown that by measuring the phase shift at different modulation frequencies, the Shockley-Read-Hall lifetime of minority carriers may be ascertained. The method is nondestructive inasmuch as there is no need to fabricate p-n junctions or Ohmic contacts, nor is it necessary to remove already existing Ohmic contacts or angle lap the surface, etc., procedures often needed when determining lifetimes with the scanning electron microscope (in which case a p-n junction must be present).

• Research Organization: Jet Propulsion Laboratory, California Institute of Technology, Pasadena, California 91109
• OSTI ID: 5941712
• Journal Information: J. Appl. Phys.; (United States), Vol. 57:6
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ARSENIDES
CARRIER LIFETIME
CHARGE CARRIERS
PHOTOLUMINESCENCE
RECOMBINATION
CHARGED-PARTICLE TRANSPORT
ELECTRONS
HOLES
P-N JUNCTIONS
SEMICONDUCTOR MATERIALS
ARSENIC COMPOUNDS
ARSENIDES
ELEMENTARY PARTICLES
FERMIONS
GALLIUM COMPOUNDS
JUNCTIONS
LEPTONS
LIFETIME
LUMINESCENCE
MATERIALS
PNICTIDES
RADIATION TRANSPORT
SEMICONDUCTOR JUNCTIONS
360603* - Materials- Properties