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Title: Porous silicon formation and etching process for use in silicon micromachining

Patent Application ·
OSTI ID:5937851

A reproducible process for uniformly etching silicon from a series of micromechanical structures used in electrical devices and the like includes providing a micromechanical structure having a silicon layer with defined areas for removal thereon and an electrochemical cell containing an aqueous hydrofluoric acid electrolyte. The micromechanical structure is submerged in the electrochemical cell and the defined areas of the silicon layer theron are anodically biased by passing a current through the electrochemical cell for a time period sufficient to cause the defined areas of the silicon layer to become porous. The formation of the depth of the porous silicon is regulated by controlling the amount of current passing through the electrochemical cell. The micromechanical structure is then removed from the electrochemical cell and submerged in a hydroxide solution to remove the porous silicon. The process is subsequently repeated for each of the series of micromechanical structures to achieve a reproducibility better than 0.3%. 1 fig.

Research Organization:
Sandia National Labs., Albuquerque, NM (USA)
Sponsoring Organization:
USDOE; USDOE, Washington, DC (USA)
DOE Contract Number:
AC04-76DP00789
Assignee:
Dept. of Energy
Patent Number(s):
PATENTS-US-A7478376
Application Number:
ON: DE91011575; PPN: US 7-478376
OSTI ID:
5937851
Country of Publication:
United States
Language:
English