skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Dramatically improved radiation hardness for CMOS silicon-gate integrated circuits even down to cryogenic temperatures. Final report

Abstract

This program focuses on Field-Hardness ; specifically, the parasitic N-channel leakages which can result on the edge of an N-channel transistor from source to drain, from drain of one device to the drain of another or from drain (across the CMOS P-well) to the N-substrate (Vdd). This type of leakage normally causes device failure well before the more publicized gage-oxide problem cause Vt to drift out of spec. By butting a poly field plate directly next to the device in the width direction (for example), it was possible to dramatically minimize the positive charge that can build up during irradiation, since there is a minimal amount of oxide under this field plate; this technique is used to extend previously used concepts of using buried P/sup +/ guard rings and special gate/field overlap layout to improve the radiation hardness of integrated circuits and has the added bonus of obviously not being sensitive to carrier freeze-out phenomena that degrade P/sup +/ guard-ring usefulness at a cryogenic temperatures.

Authors:
Publication Date:
Research Org.:
Micrel, Inc., Sunnyvale, CA (USA)
OSTI Identifier:
5936772
Report Number(s):
AD-A-184672/4/XAB
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; 42 ENGINEERING; INTEGRATED CIRCUITS; RADIATION HARDENING; MOS TRANSISTORS; LOW TEMPERATURE; SILICON; ELECTRONIC CIRCUITS; ELEMENTS; HARDENING; MICROELECTRONIC CIRCUITS; PHYSICAL RADIATION EFFECTS; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; SEMIMETALS; TRANSISTORS; 440200* - Radiation Effects on Instrument Components, Instruments, or Electronic Systems; 420800 - Engineering- Electronic Circuits & Devices- (-1989)

Citation Formats

Alter, M. Dramatically improved radiation hardness for CMOS silicon-gate integrated circuits even down to cryogenic temperatures. Final report. United States: N. p., 1987. Web.
Alter, M. Dramatically improved radiation hardness for CMOS silicon-gate integrated circuits even down to cryogenic temperatures. Final report. United States.
Alter, M. Mon . "Dramatically improved radiation hardness for CMOS silicon-gate integrated circuits even down to cryogenic temperatures. Final report". United States.
@article{osti_5936772,
title = {Dramatically improved radiation hardness for CMOS silicon-gate integrated circuits even down to cryogenic temperatures. Final report},
author = {Alter, M},
abstractNote = {This program focuses on Field-Hardness ; specifically, the parasitic N-channel leakages which can result on the edge of an N-channel transistor from source to drain, from drain of one device to the drain of another or from drain (across the CMOS P-well) to the N-substrate (Vdd). This type of leakage normally causes device failure well before the more publicized gage-oxide problem cause Vt to drift out of spec. By butting a poly field plate directly next to the device in the width direction (for example), it was possible to dramatically minimize the positive charge that can build up during irradiation, since there is a minimal amount of oxide under this field plate; this technique is used to extend previously used concepts of using buried P/sup +/ guard rings and special gate/field overlap layout to improve the radiation hardness of integrated circuits and has the added bonus of obviously not being sensitive to carrier freeze-out phenomena that degrade P/sup +/ guard-ring usefulness at a cryogenic temperatures.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1987},
month = {6}
}

Technical Report:
Other availability
Please see Document Availability for additional information on obtaining the full-text document. Library patrons may search WorldCat to identify libraries that may hold this item. Keep in mind that many technical reports are not cataloged in WorldCat.

Save / Share: