InGaAs/AlGaAs strained single quantum-well diode lasers with extremely low-threshold current density and high efficiency

Technical Report · Mon Jul 23 00:00:00 EDT 1990

OSTI ID:5934033

Choi, H K; Wang, C A

Graded-index separate-confinement heterostructure InGaAs/AlGaAs single quantum well diode lasers emitting at 1.02 microns have been fabricated from structures grown by organometallic vapor phase epitaxy. Under pulsed operation, threshold current densities as low as 65 A/sq. cm, the lowest reported for InGaAs/AlGaAs lasers, have been obtained for a cavity length L of 1500 microns. Differential quantum efficiencies as high as 90% have been obtained for L = 300 microns. Output powers as high as 1.6 W per facet and power conversion efficiencies as high as 47% have been obtained for continuous operation of uncoated lasers with L = 1000 microns.

• Research Organization: Massachusetts Inst. of Tech., Lexington, MA (USA). Lincoln Lab.
• OSTI ID: 5934033
• Report Number(s): AD-A-229317/3/XAB; JA-6543
• Resource Relation: Other Information: Pub. in Applied Physics Letters, Vol. 57, No. 4, 321-323(23 Jul 1990)
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
NEAR INFRARED RADIATION
PERFORMANCE
CONVERSION
CURRENT DENSITY
EPITAXY
FABRICATION
GALLIUM ARSENIDES
HETEROJUNCTIONS
INDEXES
INDIUM COMPOUNDS
LASER CAVITIES
OPERATION
ORGANOMETALLIC COMPOUNDS
POWER
PULSES
QUANTUM EFFICIENCY
QUANTUM ELECTRONICS
THRESHOLD CURRENT
VAPOR PHASE EPITAXY
VAPORS
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
DOCUMENT TYPES
EFFICIENCY
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
FLUIDS
GALLIUM COMPOUNDS
GASES
INFRARED RADIATION
JUNCTIONS
LASERS
ORGANIC COMPOUNDS
PNICTIDES
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SOLID STATE LASERS
426002* - Engineering- Lasers & Masers- (1990-)