Latchup in CMOS from single particles

Conference · Sat Dec 01 00:00:00 EST 1990 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)

OSTI ID:5933579

Johnston, A H; Hughlock, B W ^[1]

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1. High Technology Center, Boeing Aerospace and Electronics, Seattle, WA (US)

Single-particle latchup in bulk CMOS is examined, using heavy ions, a californium fission source, and a pulsed laser. Experiments with the laser demonstrated that latchup triggering was caused by secondary photocurrent in either the vertical or lateral parasitic transistor. Charge diffusion is shown to be important for bipolar transistor responses in latchup, which in turn makes it important to have uniform charge deposition for depths of 10 {mu}m or more. Californium sources have insufficient range, which causes cross sections measured with californium to be much lower than cross sections from heavy ion experiments.

• OSTI ID: 5933579
• Report Number(s): CONF-900723-; CODEN: IETNA; TRN: 91-014903
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA), Vol. 37:6; Conference: 27. IEEE annual conference on nuclear and space radiation effects, Reno, NV (USA), 16-20 Jul 1990; ISSN 0018-9499
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
42 ENGINEERING
CALIFORNIA
PHYSICAL RADIATION EFFECTS
ELECTRONIC CIRCUITS
CROSS SECTIONS
DIFFUSION
ELECTRIC CHARGES
FISSION
HEAVY IONS
LASERS
PHOTOCONDUCTIVITY
PULSES
TRANSISTORS
TRIGGER CIRCUITS
CHARGED PARTICLES
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
FEDERAL REGION IX
IONS
NORTH AMERICA
NUCLEAR REACTIONS
PHYSICAL PROPERTIES
PULSE CIRCUITS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
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440200* - Radiation Effects on Instrument Components
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426000 - Engineering- Components
Electron Devices & Circuits- (1990-)