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Title: Experiment of field-effect transistor with a channel made of NBN granular thin film

Conference · · IEEE Trans. Magn.; (United States)
OSTI ID:5918561

An experimental study is made on the electric field effect of the granular superconductor thin film using a three-terminal device which has a structure of a field-effect transistor with the channel made of the NbN granular thin film. When the gate voltage is varied at low temperature, the channel resistance shows a cyclical variation more than one cycle. The maximum resistance variation observed at 4.2K is about 40%. The voltage period for the resistance variation seems to correspond to the induction of the electric pair charge 2e on a grain.

Research Organization:
Yokohama National Univ. Hodogaya, Yokohama (JP)
OSTI ID:
5918561
Report Number(s):
CONF-880812-
Journal Information:
IEEE Trans. Magn.; (United States), Vol. 25:2; Conference: Applied superconductivity conference, San Francisco, CA, USA, 21 Aug 1988
Country of Publication:
United States
Language:
English

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