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Title: Pressure studies of deep levels in semiconductors

Abstract

The effects of pressure on the energetics and kinetics of electron emission and capture processes by several important deep levels in Si are discussed. The results yield the first quantitative measures of the breathing mode lattice relaxations accompanying these processes. 2 refs., 1 fig.

Authors:
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
OSTI Identifier:
5916296
Report Number(s):
SAND-89-1828C; CONF-890798-3
Journal ID: ISSN 0895--7959; ON: DE89015851
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Conference
Resource Relation:
Journal Volume: 3; Journal Issue: 1-6; Conference: AIRAPT and EHPRG international high pressure science and technology conference, Paderborn, Germany, F.R., 17-21 Jul 1989; Other Information: Portions of this document are illegible in microfiche products
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; SEMICONDUCTOR MATERIALS; ELECTRON EMISSION; CRYSTAL LATTICES; ELECTRON CAPTURE; ENERGY LEVELS; KINETICS; PRESSURE EFFECTS; PRESSURE MEASUREMENT; SILICON; CAPTURE; CRYSTAL STRUCTURE; ELEMENTS; EMISSION; MATERIALS; SEMIMETALS; 360603* - Materials- Properties; 656002 - Condensed Matter Physics- General Techniques in Condensed Matter- (1987-)

Citation Formats

Samara, G. A. Pressure studies of deep levels in semiconductors. United States: N. p., 1989. Web. doi:10.1080/08957959008246014.
Samara, G. A. Pressure studies of deep levels in semiconductors. United States. https://doi.org/10.1080/08957959008246014
Samara, G. A. 1989. "Pressure studies of deep levels in semiconductors". United States. https://doi.org/10.1080/08957959008246014. https://www.osti.gov/servlets/purl/5916296.
@article{osti_5916296,
title = {Pressure studies of deep levels in semiconductors},
author = {Samara, G. A.},
abstractNote = {The effects of pressure on the energetics and kinetics of electron emission and capture processes by several important deep levels in Si are discussed. The results yield the first quantitative measures of the breathing mode lattice relaxations accompanying these processes. 2 refs., 1 fig.},
doi = {10.1080/08957959008246014},
url = {https://www.osti.gov/biblio/5916296}, journal = {},
issn = {0895--7959},
number = 1-6,
volume = 3,
place = {United States},
year = {Sun Jan 01 00:00:00 EST 1989},
month = {Sun Jan 01 00:00:00 EST 1989}
}

Conference:
Other availability
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