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Title: Oxygen doping in close-spaced-sublimed CdTe thin films for photovoltaic cells

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.336792· OSTI ID:5905961

Efficient CdTe/CdS thin film solar cells have been the recent focus, in which the CdTe layers were reported by close-spaced sublimation, and oxygen was used to control the p-type conductivity of the deposited films. Both the fundamental gap and the impurity level were determined by the wavelength modulation reflectance spectroscopy, which demonstrates that while oxygen atoms have an ionization energy of about 0.1 eV, they do not behave as a simple shallow acceptor. This finding is supported by the electrical characterization. The oxygen concentration incorporated in the CdTe thin films were found to be in the range of 10/sup 19/--10/sup 20/ cm/sup -3/ by the IR measurements, while a carrier concentration between 10/sup 10/ and 10/sup 12/ cm/sup -3/ was obtained by Hall measurements.

Research Organization:
Institute of Physics and Astronomy, National Central University, Chung-Li, Taiwan 320, Republic of China
OSTI ID:
5905961
Journal Information:
J. Appl. Phys.; (United States), Vol. 59:10
Country of Publication:
United States
Language:
English