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Title: Method and apparatus for producing high purity silicon

Abstract

A method for producing high purity silicon includes forming a copper silicide alloy and positioning the alloy within an enclosure. A filament member is also placed within the enclosure opposite the alloy. The enclosure is then filled with a chemical vapor transport gas adapted for transporting silicon. Finally, both the filament member and the alloy are heated to temperatures sufficient to cause the gas to react with silicon at the alloy surface and deposit the reacted silicon on the filament member. In addition, an apparatus for carrying out this method is also disclosed.

Inventors:
Publication Date:
OSTI Identifier:
5895416
Patent Number(s):
US 4481232
Assignee:
Dept. of Energy EDB-85-067890
Resource Type:
Patent
Resource Relation:
Patent File Date: Filed date 27 May 1983; Other Information: PAT-APPL-498999
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; FILAMENTS; FABRICATION; SILICON; CHEMICAL VAPOR DEPOSITION; PRODUCTION; CHEMICAL REACTIONS; CHEMICAL REACTORS; COPPER ALLOYS; COPPER SILICIDES; HEATING; PURIFICATION; SILICON ALLOYS; ALLOYS; CHEMICAL COATING; COPPER COMPOUNDS; DEPOSITION; ELEMENTS; SEMIMETALS; SILICIDES; SILICON COMPOUNDS; SURFACE COATING; TRANSITION ELEMENT COMPOUNDS; 360601* - Other Materials- Preparation & Manufacture

Citation Formats

Olson, J.M. Method and apparatus for producing high purity silicon. United States: N. p., 1984. Web.
Olson, J.M. Method and apparatus for producing high purity silicon. United States.
Olson, J.M. Tue . "Method and apparatus for producing high purity silicon". United States.
@article{osti_5895416,
title = {Method and apparatus for producing high purity silicon},
author = {Olson, J.M.},
abstractNote = {A method for producing high purity silicon includes forming a copper silicide alloy and positioning the alloy within an enclosure. A filament member is also placed within the enclosure opposite the alloy. The enclosure is then filled with a chemical vapor transport gas adapted for transporting silicon. Finally, both the filament member and the alloy are heated to temperatures sufficient to cause the gas to react with silicon at the alloy surface and deposit the reacted silicon on the filament member. In addition, an apparatus for carrying out this method is also disclosed.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1984},
month = {11}
}