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Title: Model of diffusion of ion-implanted impurities, taking into account the effect of radiation defects created by ion implantation on the diffusion process

Journal Article · · Sov. Microelectron.; (United States)
OSTI ID:5894843

Radiation defects created during implantation appreciably affect the process of redistribution of impurities during subsequent heat treatments. The development of models of diffusion of ion-implanted impurities, taking into account radiation defects, will substantially increase the adequacy of the modeling of doping processes at the design stage and at the stage of testing of modern semiconductor device and IMS technology. The authors propose such a model. For the model, the authors studied the diffusion of boron, gallium, arsenic, and antimony implanted in silicon. Thermal diffusion of these impurities is described under the assumption that the neutral and singly charged equilibrium vacancy-impurity complexes (VIC), formed correspondingly by singly charged and neutral vacancies and impurity atoms at the position of substitution, migrate. It is assumed that the different charge states of the vacancies and vacancy-impurity complexes as well as the impurity atoms, vacancies, and VIC are in local thermodynamic equilibrium.

Research Organization:
Minsk Radio Engineering Institute, USSR
OSTI ID:
5894843
Journal Information:
Sov. Microelectron.; (United States), Vol. 14:6; Other Information: Translated from Mikroelektronika Akad. Nauk SSSR; 14: No. 6, 542-547(Nov-Dec 1985)
Country of Publication:
United States
Language:
English