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Title: Toward a theory of currents in dielectrics having traps in a strong electric field

Abstract

The authors examine the current flow process in dielectrics having deep traps for the case of monopolar charge carrier injection (for electrons definitiveness). The authors consider the traps which have captured electrons to be negatively charged and the traps having no electrons to be electrically neutral. The authors also examine monoenergetic traps distributed in a volume at a constant density. Using absolute values for the conduction current and field in the dielectric, the authors write a system of equations which describe the current flow process. As an example, the authors consider the MNOS structure (metal-silicon nitride, Si/sub 3/N/sub 4/-silicon dioxide, SiO/sub 2/-semiconductor (Si)).

Authors:
;
Publication Date:
OSTI Identifier:
5892945
Resource Type:
Journal Article
Journal Name:
Sov. Microelectron.; (United States)
Additional Journal Information:
Journal Volume: 15:2; Other Information: Translated from Mikroelektronika Arad. Nauk SSSR; 15: No. 2, 135-141(Mar-Apr 1986)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DIELECTRIC MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; MATHEMATICAL MODELS; SPACE CHARGE; SEMICONDUCTOR MATERIALS; CHARGE DISTRIBUTION; ELECTRIC CURRENTS; ELECTRIC FIELDS; ELECTRON DENSITY; ELECTRONS; SCATTERING; TRAPPING; TRAPS; CURRENTS; ELECTRICAL PROPERTIES; ELEMENTARY PARTICLES; FERMIONS; LEPTONS; MATERIALS; MOBILITY; PARTICLE MOBILITY; PHYSICAL PROPERTIES; 360603* - Materials- Properties

Citation Formats

Grekov, E V, and Sukhorukov, O G. Toward a theory of currents in dielectrics having traps in a strong electric field. United States: N. p., 1986. Web.
Grekov, E V, & Sukhorukov, O G. Toward a theory of currents in dielectrics having traps in a strong electric field. United States.
Grekov, E V, and Sukhorukov, O G. Sat . "Toward a theory of currents in dielectrics having traps in a strong electric field". United States.
@article{osti_5892945,
title = {Toward a theory of currents in dielectrics having traps in a strong electric field},
author = {Grekov, E V and Sukhorukov, O G},
abstractNote = {The authors examine the current flow process in dielectrics having deep traps for the case of monopolar charge carrier injection (for electrons definitiveness). The authors consider the traps which have captured electrons to be negatively charged and the traps having no electrons to be electrically neutral. The authors also examine monoenergetic traps distributed in a volume at a constant density. Using absolute values for the conduction current and field in the dielectric, the authors write a system of equations which describe the current flow process. As an example, the authors consider the MNOS structure (metal-silicon nitride, Si/sub 3/N/sub 4/-silicon dioxide, SiO/sub 2/-semiconductor (Si)).},
doi = {},
url = {https://www.osti.gov/biblio/5892945}, journal = {Sov. Microelectron.; (United States)},
number = ,
volume = 15:2,
place = {United States},
year = {1986},
month = {11}
}