Direct measurement of electron emission from defect states at silicon grain boundaries

Journal Article · Mon Aug 13 00:00:00 EDT 1979 · Phys. Rev. Lett.; (United States)

DOI:https://doi.org/10.1103/PhysRevLett.43.532· OSTI ID:5889809

Seager, C H; Pike, G E; Ginley, D S

The first direct measurements of charge emission from silicon grain-boundary defect states have been made by monitoring the recovery of the nonequilibrium grain-boundary barrier capacitance. The density of grain-boundary states obtained in this fashion is in excellent agreement with the values found from deconvoluting room-temperature I-V data. These data are shown to suggest strongly that the double-depletion-layer/thermal-emission model gives a good description of silicon grain boundaries.

• Research Organization: Sandia Laboratories, Albuquerque, New Mexico 87185
• OSTI ID: 5889809
• Journal Information: Phys. Rev. Lett.; (United States), Vol. 43:7
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON
ELECTRON EMISSION
GRAIN BOUNDARIES
ANNEALING
CRYSTAL DEFECTS
DIELECTRIC PROPERTIES
ELECTRIC CONDUCTIVITY
ELECTRONIC STRUCTURE
ENERGY-LEVEL DENSITY
FERMI LEVEL
LOW TEMPERATURE
MEDIUM TEMPERATURE
TRAPPING
VERY HIGH TEMPERATURE
CRYSTAL STRUCTURE
ELECTRICAL PROPERTIES
ELEMENTS
EMISSION
ENERGY LEVELS
HEAT TREATMENTS
MICROSTRUCTURE
PHYSICAL PROPERTIES
SEMIMETALS
360603* - Materials- Properties
360602 - Other Materials- Structure & Phase Studies