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Title: InP:Fe and GaAs:Cr picosecond photoconductive radiation detectors. Master's thesis

Abstract

The dark-current, impulse, and square-pulse response measurements of photoconductive devices fabricated from two different types of materials, gallium arsenide with chromium dopant (GaAs:r) and indium phosphide with iron dopant (InP:Fe) are reported. These devices have been subjected to irradiation from the S-band electron linear accelerator (LINAC) with an energy fo 100 MeV at room temperature. Fluence ranged between 10/sup 13/ and 10/sup 16/ electrons/sq cm. Dark/current decreases with increasing fluence for the GaAs:Cr devices whereas InP:Fe shows an increase in the dark current. Both types of materials exhibit extremely fast impulse response after the irradiation. Electron mobility, drift velocity, and response speed decrease with increasing fluence. Response speeds of < 100 ps are achieved by fast-carrier relaxation in the semiconductor due to the introduction of trapping and recombination centers resulting from the irradiation damage. The GaAs:Cr, unlike the InP:Fe, more closely follows the longer square-pulse exhibiting non nonlinearity. All results are consistent with previously investigated neutron irradiated devices.

Authors:
Publication Date:
Research Org.:
Naval Postgraduate School, Monterey, CA (USA)
OSTI Identifier:
5889513
Report Number(s):
AD-A-164413/7/XAB
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; GALLIUM ARSENIDES; PHYSICAL RADIATION EFFECTS; INDIUM PHOSPHIDES; PHOTODETECTORS; CHROMIUM; DAMAGE; ELECTRON MOBILITY; IRON; IRRADIATION; PHOTOCONDUCTIVITY; PULSES; RELAXATION; ARSENIC COMPOUNDS; ARSENIDES; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELEMENTS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; METALS; MOBILITY; PARTICLE MOBILITY; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; RADIATION EFFECTS; TRANSITION ELEMENTS; 440200* - Radiation Effects on Instrument Components, Instruments, or Electronic Systems; 440101 - Radiation Instrumentation- General Detectors or Monitors & Radiometric Instruments

Citation Formats

Keipper, P J. InP:Fe and GaAs:Cr picosecond photoconductive radiation detectors. Master's thesis. United States: N. p., 1985. Web.
Keipper, P J. InP:Fe and GaAs:Cr picosecond photoconductive radiation detectors. Master's thesis. United States.
Keipper, P J. 1985. "InP:Fe and GaAs:Cr picosecond photoconductive radiation detectors. Master's thesis". United States.
@article{osti_5889513,
title = {InP:Fe and GaAs:Cr picosecond photoconductive radiation detectors. Master's thesis},
author = {Keipper, P J},
abstractNote = {The dark-current, impulse, and square-pulse response measurements of photoconductive devices fabricated from two different types of materials, gallium arsenide with chromium dopant (GaAs:r) and indium phosphide with iron dopant (InP:Fe) are reported. These devices have been subjected to irradiation from the S-band electron linear accelerator (LINAC) with an energy fo 100 MeV at room temperature. Fluence ranged between 10/sup 13/ and 10/sup 16/ electrons/sq cm. Dark/current decreases with increasing fluence for the GaAs:Cr devices whereas InP:Fe shows an increase in the dark current. Both types of materials exhibit extremely fast impulse response after the irradiation. Electron mobility, drift velocity, and response speed decrease with increasing fluence. Response speeds of < 100 ps are achieved by fast-carrier relaxation in the semiconductor due to the introduction of trapping and recombination centers resulting from the irradiation damage. The GaAs:Cr, unlike the InP:Fe, more closely follows the longer square-pulse exhibiting non nonlinearity. All results are consistent with previously investigated neutron irradiated devices.},
doi = {},
url = {https://www.osti.gov/biblio/5889513}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1985},
month = {12}
}

Technical Report:
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