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Title: Direct flow crystal growth system

Patent Application ·
OSTI ID:5884138

A crystal is grown in a constantly filtered solution which is flowed directly into the growing face of a crystal. In a continuous flow system, solution at its saturation temperature is removed from a crystal growth tank, heated above its saturation temperatue, filtered, cooled back to its saturation temperature, and returned to the tank. 2 figs.

Research Organization:
Lawrence Livermore National Lab., CA (USA)
Sponsoring Organization:
USDOE; USDOE, Washington, DC (USA)
DOE Contract Number:
W-7405-ENG-48
Assignee:
Dept. of Energy
Patent Number(s):
PATENTS-US-A7428538
Application Number:
ON: DE91011679; PPN: US 7-428538
OSTI ID:
5884138
Country of Publication:
United States
Language:
English