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Title: Schottky contacts on chemically etched p- and n-type indium phosphide

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.93101· OSTI ID:5883130

The Schottky-barrier energy phi/sub B/ for Al, Ni, Co, Pd, Au, and Ag contacts on chemically etched <100> surfaces of both p- and n-type InP were measured and the metallurgical behavior of the contact structures were studied using Auger electron spectroscopy. phi/sub B/ was found to be a function of the chemical reactivity of the contact metal with the InP substrate. Extensive outdiffusion of In was observed in the Au and Ag contacts. The results indicate that the chemical effects at the metal-semiconductor interface are a determining factor in the formation of InP Schottky barriers.

Research Organization:
Department of Electrical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
DOE Contract Number:
EY-76-8-02-2952
OSTI ID:
5883130
Journal Information:
Appl. Phys. Lett.; (United States), Vol. 40:5
Country of Publication:
United States
Language:
English