Large area silicon sheet by EFG. Fourth quarterly report, October 1-December 31, 1978
Crystal growth station no. 1 further explored displaced die concepts, along with some initial work on buckle characterization. Also, convective impurity redistribution was further studied. In particular, a side channel die was used to grow material doped with aluminum and compare the results at least semiquantitatively with computer calculations. The ribbons grown have not been characterized yet. In station no. 3A growth from single cartridges was continued to create a quality baseline to allow comparison of the results with those in the upcoming multiple run and to choose the most appropriate die design. Also fabrication and assembly work on the actual five ribbon furnace continued. On furnace 17 progress was made toward the development of the video optical system for edge position and meniscus height control. Also, in preparation for a detailed program, designed to explore the buckling problem, ribbon width ribon was then grown under stable conditions without a cold shoe, an achievement essential to finally arrive at quantitative correlations between growth conditions and buckle formation. The most significant result from the characterization program was a demonstration that the original runs with displaced dies were indeed reproducible, inasmuch as large area cells (7.5 x 7.5 cm/sup 2/) of approx. 9% efficiency could be fabricated again from run 18-103, a repeat of run no. 18-102 which had previously produced the best cells.
- Research Organization:
- Mobil Tyco Solar Energy Corp., Waltham, MA (USA)
- DOE Contract Number:
- NAS-7-100-954355
- OSTI ID:
- 5868398
- Report Number(s):
- DOE/JPL/954355-4-T1
- Country of Publication:
- United States
- Language:
- English
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