skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: High efficiency cell development. Final technical progress report, 1978. Texas Instruments report No. 03-79-16. [Tandem Junction Cell with back contacts]

Abstract

This activity focused on the development of a novel cell structure, the Tandem Junction Cell (TJC), developed at Texas Instruments. The TJC features an all back contact cell having a textured front surface that contains an electrically floating N/sup +//P junction. The illuminated side (front) of the TJC is textured to reduce reflection and to increase the path length of the absorbed light. A shallow N/sup +/ junction is diffused into the front surface. The thin base region, approx. 100 ..mu..m, is P type. The N/sup +/ collecting junction and P/sup +/ contact regions are formed on the back side. The N/sup +/ and P/sup +/ regions are in the form of an interposed finger pattern. This solar cell structure has several very attractive built-in features. With no contact metallization on the front side, shadowing is eliminated. The back contact system is particularly useful in module assembly. All interconnects and bus bars can be located behind the solar cells and virtually no module space is wasted. The TJC appears to offer the opportunity to achieve very high efficiency for silicon solar cells. Development work under this activity was primarily focused on improvements in the contact metallization pattern, shallow front N/supmore » +/ diffusion and methods to improve V/sub oc/. Included in this effort, is the effect of minority carrier lifetime and cell thickness. At the beginning of this program, 2 x 2 cm TJC's with AM1 efficiency in the 10 to 12% range had been fabricated.« less

Authors:
Publication Date:
Research Org.:
Texas Instruments, Inc., Dallas (USA)
OSTI Identifier:
5868308
Report Number(s):
DOE/JPL/954881-5
DOE Contract Number:  
NAS-7-100-954881
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; SILICON SOLAR CELLS; FABRICATION; CARRIER LIFETIME; DESIGN; DIFFUSION; EFFICIENCY; ELECTRIC CONDUCTIVITY; ELECTRIC CONTACTS; ELECTRIC POTENTIAL; FILL FACTORS; MONOCRYSTALS; P-N JUNCTIONS; SPECTRAL RESPONSE; THICKNESS; CRYSTALS; DIMENSIONS; DIRECT ENERGY CONVERTERS; ELECTRICAL EQUIPMENT; ELECTRICAL PROPERTIES; EQUIPMENT; JUNCTIONS; LIFETIME; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; PHYSICAL PROPERTIES; SEMICONDUCTOR JUNCTIONS; SOLAR CELLS; 140501* - Solar Energy Conversion- Photovoltaic Conversion

Citation Formats

Carbajal, Bernard G. High efficiency cell development. Final technical progress report, 1978. Texas Instruments report No. 03-79-16. [Tandem Junction Cell with back contacts]. United States: N. p., 1979. Web. doi:10.2172/5868308.
Carbajal, Bernard G. High efficiency cell development. Final technical progress report, 1978. Texas Instruments report No. 03-79-16. [Tandem Junction Cell with back contacts]. United States. doi:10.2172/5868308.
Carbajal, Bernard G. Thu . "High efficiency cell development. Final technical progress report, 1978. Texas Instruments report No. 03-79-16. [Tandem Junction Cell with back contacts]". United States. doi:10.2172/5868308. https://www.osti.gov/servlets/purl/5868308.
@article{osti_5868308,
title = {High efficiency cell development. Final technical progress report, 1978. Texas Instruments report No. 03-79-16. [Tandem Junction Cell with back contacts]},
author = {Carbajal, Bernard G.},
abstractNote = {This activity focused on the development of a novel cell structure, the Tandem Junction Cell (TJC), developed at Texas Instruments. The TJC features an all back contact cell having a textured front surface that contains an electrically floating N/sup +//P junction. The illuminated side (front) of the TJC is textured to reduce reflection and to increase the path length of the absorbed light. A shallow N/sup +/ junction is diffused into the front surface. The thin base region, approx. 100 ..mu..m, is P type. The N/sup +/ collecting junction and P/sup +/ contact regions are formed on the back side. The N/sup +/ and P/sup +/ regions are in the form of an interposed finger pattern. This solar cell structure has several very attractive built-in features. With no contact metallization on the front side, shadowing is eliminated. The back contact system is particularly useful in module assembly. All interconnects and bus bars can be located behind the solar cells and virtually no module space is wasted. The TJC appears to offer the opportunity to achieve very high efficiency for silicon solar cells. Development work under this activity was primarily focused on improvements in the contact metallization pattern, shallow front N/sup +/ diffusion and methods to improve V/sub oc/. Included in this effort, is the effect of minority carrier lifetime and cell thickness. At the beginning of this program, 2 x 2 cm TJC's with AM1 efficiency in the 10 to 12% range had been fabricated.},
doi = {10.2172/5868308},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1979},
month = {2}
}