Characterization of thin silicon oxynitride films prepared by low pressure rapid thermal chemical vapor deposition

Xu, X L; McLarty, P K; Brush, H; Misra, V; Wortman, J J; Harris, G S

doi:10.1149/1.2220941

Title: Characterization of thin silicon oxynitride films prepared by low pressure rapid thermal chemical vapor deposition

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Abstract

Thin silicon oxynitride (Si-N-O) films have been deposited using low pressure rapid thermal chemical vapor deposition (RTCVD), with silane (SiH[sub 4]), nitrous oxide (N[sub 2]O), and ammonia (NH[sub 3]) as the reactive gases. Structural and kinetic studies indicate that an increase in the NH[sub 3]/N[sub 2]O flow rate ratio leads to an increase N/O atomic ratio and a decreased Si-N-O deposition rate for constant SiH[sub 4] and N[sub 2]O flow rates. Experimental results show that RTCVD Si-N-O films with high throughput at low thermal budget, uniform composition, and atomically flat interface can be achieved using a SiH[sub 4]/NH[sub 3]/N[sub 2]O gas mixture. Electrical characterization of poly Si/Si-N-O/Si capacitors demonstrates that for NH[sub 3]/N[sub 2]O flow rate ratios ranging from 20 to 100%, the mid-gap interface trap densities of the deposited Si-N-O films are [<=]2 [times] 10[sup 10] eV[sup [minus]1] cm[sup [minus]2] and Fowler-Nordheim electron-tunneling rather than Frenkel-Poole thermal-emission is the dominant conduction mechanism in the thin RTCVD Si-N-O films.

Authors:

Xu, X L; McLarty, P K; Brush, H; Misra, V; Wortman, J J ^[1]; Harris, G S ^[2]

North Carolina State Univ., Raleigh, NC (United States). Dept. of Electrical and Computer Engineering
North Carolina State Univ., Raleigh, NC (United States). Dept. of Material Science and Engineering

Publication Date:: Fri Oct 01 00:00:00 EDT 1993

OSTI Identifier:: 5867369

Resource Type:: Journal Article

Journal Name:: Journal of the Electrochemical Society; (United States)

Additional Journal Information:: Journal Volume: 140:10; Journal ID: ISSN 0013-4651

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; SILICON NITRIDES; CHEMICAL VAPOR DEPOSITION; SILICON OXIDES; VAPOR DEPOSITED COATINGS; ELECTRIC CONDUCTIVITY; AMMONIA; CAPACITORS; CHEMICAL REACTION KINETICS; EXPERIMENTAL DATA; FABRICATION; FLOW RATE; NITROUS OXIDE; SEMICONDUCTOR MATERIALS; SILANES; CHALCOGENIDES; CHEMICAL COATING; COATINGS; DATA; DEPOSITION; ELECTRICAL EQUIPMENT; ELECTRICAL PROPERTIES; EQUIPMENT; HYDRIDES; HYDROGEN COMPOUNDS; INFORMATION; KINETICS; MATERIALS; NITRIDES; NITROGEN COMPOUNDS; NITROGEN HYDRIDES; NITROGEN OXIDES; NUMERICAL DATA; ORGANIC COMPOUNDS; ORGANIC SILICON COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; REACTION KINETICS; SILICON COMPOUNDS; SURFACE COATING; 360601* - Other Materials- Preparation & Manufacture; 360606 - Other Materials- Physical Properties- (1992-)

Citation Formats


                    Xu, X L, McLarty, P K, Brush, H, Misra, V, Wortman, J J, and Harris, G S. Characterization of thin silicon oxynitride films prepared by low pressure rapid thermal chemical vapor deposition.  United States: N. p., 1993. 
        Web.  doi:10.1149/1.2220941.

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                    Xu, X L, McLarty, P K, Brush, H, Misra, V, Wortman, J J, & Harris, G S. Characterization of thin silicon oxynitride films prepared by low pressure rapid thermal chemical vapor deposition.  United States.  https://doi.org/10.1149/1.2220941

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                    Xu, X L, McLarty, P K, Brush, H, Misra, V, Wortman, J J, and Harris, G S. 1993.  
        "Characterization of thin silicon oxynitride films prepared by low pressure rapid thermal chemical vapor deposition".  United States.  https://doi.org/10.1149/1.2220941.

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@article{osti_5867369,

  title        = {Characterization of thin silicon oxynitride films prepared by low pressure rapid thermal chemical vapor deposition},

  author       = {Xu, X L and McLarty, P K and Brush, H and Misra, V and Wortman, J J and Harris, G S},

  abstractNote = {Thin silicon oxynitride (Si-N-O) films have been deposited using low pressure rapid thermal chemical vapor deposition (RTCVD), with silane (SiH[sub 4]), nitrous oxide (N[sub 2]O), and ammonia (NH[sub 3]) as the reactive gases. Structural and kinetic studies indicate that an increase in the NH[sub 3]/N[sub 2]O flow rate ratio leads to an increase N/O atomic ratio and a decreased Si-N-O deposition rate for constant SiH[sub 4] and N[sub 2]O flow rates. Experimental results show that RTCVD Si-N-O films with high throughput at low thermal budget, uniform composition, and atomically flat interface can be achieved using a SiH[sub 4]/NH[sub 3]/N[sub 2]O gas mixture. Electrical characterization of poly Si/Si-N-O/Si capacitors demonstrates that for NH[sub 3]/N[sub 2]O flow rate ratios ranging from 20 to 100%, the mid-gap interface trap densities of the deposited Si-N-O films are [<=]2 [times] 10[sup 10] eV[sup [minus]1] cm[sup [minus]2] and Fowler-Nordheim electron-tunneling rather than Frenkel-Poole thermal-emission is the dominant conduction mechanism in the thin RTCVD Si-N-O films.},

  doi          = {10.1149/1.2220941},

  url          = {https://www.osti.gov/biblio/5867369},
  journal      = {Journal of the Electrochemical Society; (United States)},

  issn         = {0013-4651},

  number       = ,

  volume       = 140:10,

  place        = {United States},

  year         = {Fri Oct 01 00:00:00 EDT 1993},

  month        = {Fri Oct 01 00:00:00 EDT 1993}

}

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