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Title: Investigations of the growth of TiN thin films from Ti(NMe[sub 2])[sub 4] and ammonia

Abstract

Growth of clean (<5% carbon), stoichiometric (Ti:N = 1.15 [+-] 0.1) titanium nitride thin films on Si(100) substrate from the reaction of tetrakisdimethylamido titanium, Ti(NMe[sub 2])[sub 4], and ammonia is reported. Films were deposited using a novel gas delivery system which allowed the reactants to be mixed at elevated pressures with the substrate held in high vacuum. The films were analyzed using Rutherford backscattering and Auger electron spectroscopy while the gas-phase chemistry was monitored by mass spectrometry. The quality of the films was measured as a function of gas pressure, reactant ratio, and substrate temperature. Growth on patterned wafers gave information on reactant sticking coefficients and surface mobilities. The reaction of Ti(NMe[sub 2])[sub 4] with [sup 15]NH[sub 3] or ND[sub 3] clearly showed that both the nitrogen in a clean TiN film and the hydrogen (deuterium) in the gaseous dimethylamine product are derived exclusively from the ammonia. Mass spectrometry studies indicate that the reactive intermediate may be a high molecular weight oligomer consisting of Ti, N, H, and perhaps C. These finding are discussed both in terms of their impact on understanding the growth mechanism, as well as on the potential of this precursor system to be used in amore » manufacturing process.« less

Authors:
; ;  [1]
  1. AT and T Bell Lab., Murray Hill, NJ (United States)
Publication Date:
OSTI Identifier:
5857027
Resource Type:
Journal Article
Journal Name:
Journal of the Electrochemical Society; (United States)
Additional Journal Information:
Journal Volume: 140:9; Journal ID: ISSN 0013-4651
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; TITANIUM NITRIDES; CHEMICAL VAPOR DEPOSITION; AMMONIA; CHEMICAL REACTION KINETICS; EXPERIMENTAL DATA; ORGANOMETALLIC COMPOUNDS; REACTION INTERMEDIATES; SILICON; TRACER TECHNIQUES; VAPOR DEPOSITED COATINGS; CHEMICAL COATING; COATINGS; DATA; DEPOSITION; ELEMENTS; HYDRIDES; HYDROGEN COMPOUNDS; INFORMATION; ISOTOPE APPLICATIONS; KINETICS; NITRIDES; NITROGEN COMPOUNDS; NITROGEN HYDRIDES; NUMERICAL DATA; ORGANIC COMPOUNDS; PNICTIDES; REACTION KINETICS; SEMIMETALS; SURFACE COATING; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; 360201* - Ceramics, Cermets, & Refractories- Preparation & Fabrication

Citation Formats

Prybyla, J A, Chiang, C M, and Dubois, L H. Investigations of the growth of TiN thin films from Ti(NMe[sub 2])[sub 4] and ammonia. United States: N. p., 1993. Web. doi:10.1149/1.2220889.
Prybyla, J A, Chiang, C M, & Dubois, L H. Investigations of the growth of TiN thin films from Ti(NMe[sub 2])[sub 4] and ammonia. United States. https://doi.org/10.1149/1.2220889
Prybyla, J A, Chiang, C M, and Dubois, L H. Wed . "Investigations of the growth of TiN thin films from Ti(NMe[sub 2])[sub 4] and ammonia". United States. https://doi.org/10.1149/1.2220889.
@article{osti_5857027,
title = {Investigations of the growth of TiN thin films from Ti(NMe[sub 2])[sub 4] and ammonia},
author = {Prybyla, J A and Chiang, C M and Dubois, L H},
abstractNote = {Growth of clean (<5% carbon), stoichiometric (Ti:N = 1.15 [+-] 0.1) titanium nitride thin films on Si(100) substrate from the reaction of tetrakisdimethylamido titanium, Ti(NMe[sub 2])[sub 4], and ammonia is reported. Films were deposited using a novel gas delivery system which allowed the reactants to be mixed at elevated pressures with the substrate held in high vacuum. The films were analyzed using Rutherford backscattering and Auger electron spectroscopy while the gas-phase chemistry was monitored by mass spectrometry. The quality of the films was measured as a function of gas pressure, reactant ratio, and substrate temperature. Growth on patterned wafers gave information on reactant sticking coefficients and surface mobilities. The reaction of Ti(NMe[sub 2])[sub 4] with [sup 15]NH[sub 3] or ND[sub 3] clearly showed that both the nitrogen in a clean TiN film and the hydrogen (deuterium) in the gaseous dimethylamine product are derived exclusively from the ammonia. Mass spectrometry studies indicate that the reactive intermediate may be a high molecular weight oligomer consisting of Ti, N, H, and perhaps C. These finding are discussed both in terms of their impact on understanding the growth mechanism, as well as on the potential of this precursor system to be used in a manufacturing process.},
doi = {10.1149/1.2220889},
url = {https://www.osti.gov/biblio/5857027}, journal = {Journal of the Electrochemical Society; (United States)},
issn = {0013-4651},
number = ,
volume = 140:9,
place = {United States},
year = {1993},
month = {9}
}