Modified photoresist etch mask process for InP channeled substrate lasers
The authors develop a new photoresist etch mask process to etch (001) InP wafers to obtain (111) B-faceted v-grooves for channeled substrate laser applications. They investigate the use of HCl and HF solutions to remove native oxide layers prior to v-groove etching. They also study the relationship between the photoresist mask undercutting and the bath temperature used for native oxide removal. The degree of undercutting in photoresist mask can be reduced about two times by increasing the HF bath temperature from room temperature to 48/sup 0/C during the oxide removal process. They also identify two important factors that control the mask undercutting rates as (i) the thickness of native oxide on InP surface and (ii) the chemical reaction between InP and the oxide removal bath solution.
- Research Organization:
- AT and T Bell Labs., Murray Hill, NJ (USA)
- OSTI ID:
- 5854421
- Journal Information:
- J. Electrochem. Soc.; (United States), Vol. 136:3
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
INDIUM PHOSPHIDES
ION CHANNELING
THIN FILMS
ETCHING
CHEMICAL REACTIONS
HYDROCHLORIC ACID
HYDROFLUORIC ACID
LASERS
OXIDES
PHOTOCHEMISTRY
SUBSTRATES
CHALCOGENIDES
CHANNELING
CHEMISTRY
FILMS
HYDROGEN COMPOUNDS
INDIUM COMPOUNDS
INORGANIC ACIDS
OXYGEN COMPOUNDS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SURFACE FINISHING
360601* - Other Materials- Preparation & Manufacture
656003 - Condensed Matter Physics- Interactions between Beams & Condensed Matter- (1987-)
360603 - Materials- Properties