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Title: Non-localized impact ionization in semiconductors. Final report, 1 August 1974-31 July 1977

Abstract

Studies have been directed towards improving the understanding of the 'nonlocalized' nature of impact ionization: i.e., the fact that carriers must be field accelerated by at least the threshold energy for impact ionization before they can create an electron-hole pair. Work has been directed specifically towards GaAs and InP in Schottky barrier configurations. For GaAs, studies have shown that momentum and energy conservation impose an effective density of available states that grows as the 2 1/2 power of the energy in excess of threshold as opposed to the 3 1/2 and 5 power alternatives. It has also been that the capture cross sections that we can deduce from cascade production by high energy primary radiation are consistent with the modeling needed for the ionization coefficient. This problem was investigated using a Markov formulation and the results of the energy required per pair produced are strongly influenced by the ratio of pair production cross section to phonon scattering cross section at a primary energy of twice the threshold energy. The energy dependence about this energy serves mainly to perturb the result.

Authors:
;
Publication Date:
Research Org.:
University of Southern California, Los Angeles (USA)
OSTI Identifier:
5853180
Alternate Identifier(s):
OSTI ID: 5853180
Report Number(s):
AD-A-065186
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; GALLIUM ARSENIDES; SCHOTTKY DEFECTS; INDIUM PHOSPHIDES; INTERFACES; IONIZATION; MOMENTUM TRANSFER; ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; POINT DEFECTS; VACANCIES 440200* -- Radiation Effects on Instrument Components, Instruments, or Electronic Systems

Citation Formats

Crowell, C.R., and Kao, C. Non-localized impact ionization in semiconductors. Final report, 1 August 1974-31 July 1977. United States: N. p., 1979. Web.
Crowell, C.R., & Kao, C. Non-localized impact ionization in semiconductors. Final report, 1 August 1974-31 July 1977. United States.
Crowell, C.R., and Kao, C. Thu . "Non-localized impact ionization in semiconductors. Final report, 1 August 1974-31 July 1977". United States.
@article{osti_5853180,
title = {Non-localized impact ionization in semiconductors. Final report, 1 August 1974-31 July 1977},
author = {Crowell, C.R. and Kao, C.},
abstractNote = {Studies have been directed towards improving the understanding of the 'nonlocalized' nature of impact ionization: i.e., the fact that carriers must be field accelerated by at least the threshold energy for impact ionization before they can create an electron-hole pair. Work has been directed specifically towards GaAs and InP in Schottky barrier configurations. For GaAs, studies have shown that momentum and energy conservation impose an effective density of available states that grows as the 2 1/2 power of the energy in excess of threshold as opposed to the 3 1/2 and 5 power alternatives. It has also been that the capture cross sections that we can deduce from cascade production by high energy primary radiation are consistent with the modeling needed for the ionization coefficient. This problem was investigated using a Markov formulation and the results of the energy required per pair produced are strongly influenced by the ratio of pair production cross section to phonon scattering cross section at a primary energy of twice the threshold energy. The energy dependence about this energy serves mainly to perturb the result.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1979},
month = {2}
}

Technical Report:
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