Gain-switched picosecond pulse (<10 ps) generation from 1. 3 /mu/m InGaAsP laser diodes

Journal Article · Thu Jun 01 00:00:00 EDT 1989 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/3.29277· OSTI ID:5851726

Liu, H F; Fukazawa, M; Kamiya, T; Kawai, kY

Fabry-Perot type laser diodes with high injection efficiency were found to be suitable for ultrashort pulse generation. By decreasing cavity length, the shortest pulsewidth of 6.7 ps at a repetition rate of 100 MHz was achieved under gain switching scheme. A systematic investigation on bias level dependence of pulsewidth, peak output power, as well as the effect of cavity length shortening was performed. Suppression of facet reflection of a laser diode with a normal cavity length was effective in reducing the pulsewidth (from 16.6 to 10.2 ps). It was found the optimum condition both for minimizing pulsewidth and for maximizing peak output power can be obtained by selecting the dc bias level, which was also confirmed in a numerical analysis based on multimode rate equations considering the gain compression factor. The rate equation analysis also indicated that the gain compression factor may not influence the multimode lasers as much under gain switching condition as compared with single-mode lasers. The influence of electrical parasitics of the lasers to the injected electrical pulses and the generated optical pulses is briefly discussed.

• Research Organization: Dept. of Electronic Engineering, Univ. of Tokyo, Tokyo 113 (JP); Oki Electric Industry Co. Ltd., Tokyo (Japan)
• OSTI ID: 5851726
• Journal Information: IEEE J. Quant. Electron.; (United States), Vol. 25:6
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
EFFICIENCY
ELECTRICAL PROPERTIES
EQUATIONS
FABRY-PEROT INTERFEROMETER
GAIN
LASER CAVITIES
NUMERICAL SOLUTION
OPTICAL PROPERTIES
PULSE GENERATORS
SEMICONDUCTOR DIODES
AMPLIFICATION
ELECTRONIC EQUIPMENT
EQUIPMENT
FUNCTION GENERATORS
INTERFEROMETERS
LASERS
MEASURING INSTRUMENTS
PHYSICAL PROPERTIES
SEMICONDUCTOR DEVICES
SOLID STATE LASERS
420300* - Engineering- Lasers- (-1989)