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Title: Properties of high-T/sub c/, A-15 Nb/sub 3/Si: An extrapolation

Journal Article · · Phys. Rev., B: Condens. Matter; (United States)

We have measured the low-temperature specific heats of two samples of A-15 Nb-Si prepared by chemical vapor deposition. From the specific-heat data, low-T/sub c/, A-15 Nb-Si is found to have a ..gamma.. of 15.2 +- 1.5 mJ/mole K/sup 2/ and a Debye temperature, THETA/sub D/, of 319 +- 10 K, for a mole containing four atoms. In addition, the low-temperature specific heat of arc melted Nb/sub 0.82/Ge/sub 0.18/(A-15 structure) has been measured. The ..gamma.. was found to be 15.2 +- 1.0 mJ/mole K/sup 2/ and THETA/sub D/ was 345 +- 10 K. Using these data, the properties of stoichiometric (high-T/sub c/) Nb/sub 3/Si are extrapolated from the substoichiometric Nb-Si samples measured, by analogy to the Nb-Ge system. Stoichiometric, single-phase A-15 Nb/sub 3/Si, if preparable, should have a ..gamma.. of 30 mJ/mole K/sup 2/ and a THETA/sub D/ of 275 K. By calculating lambda, the electron-phonon coupling constant, and treating T/sub c/ as a variable (15--30 K), the electronic density of states, N (0), is extracted from this extrapolated ..gamma.. and is found to be low, varying from 1.38 states /(eV atom) at T/sub c/=15 K to 0.91 states /(eV atom) at T/sub c/=30 K. The N (0) calculated for the low-T/sub c/ Nb/sub 0.82/Ge/sub 0.18/ is 1.01 states/(eV atom) and is remarkably close to the 1.08 states/(eV atom) calculated for the high-T/sub c/ Nb/sub 3/Ge.

Research Organization:
University of California, Los Alamos Scientific Laboratory, Los Alamos, New Mexico 87545
OSTI ID:
5848671
Journal Information:
Phys. Rev., B: Condens. Matter; (United States), Vol. 20:9
Country of Publication:
United States
Language:
English