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Title: Static contrast enhancement layer for photolithographic processes

Abstract

In the ever expanding microelectronic industry, there is a constant demand for improved photolithographic techniques useful in the manufacture of integrated circuits and the like. Over the years, however, the linewidths of structures patterned for microelectronic fabrication have continued to decrease. At present, 0.8 {mu}m lines and spaces are now imaged in commercial production and much smaller features are predicted for the near future. These feature sizes represent a significant drop below the previously predicted limit of optical lithography, originally thought to be around 1.25 {mu}m. These advances have been due in large part to the extensive worldwide research effort in improved optical patterning techniques. One of the more significant developments in optical patterning has been the advent of contrast enhancement layer lithography. A static stable contrast enhancement layer is provided for improving the resolution possible in photolithographic processes which comprises a photoacid generator such as an onium salt and acid-base indicator dye such as methyl yellow incorporated into a polymeric binder. The contrast enhancement layer is coated onto a conventional photoresist, and upon exposure to light in the appropriate absorption range, the salt undergoes a transformation to a strong Bronsted acid which will then bleach the indicator dye. Themore » system is particularly designed so that an in situ contact mask is formed in a first deep UV exposure which is used to mask light projected upon the photoresist at a second wavelength. The present invention allows for exposure using deep UV sources without the need for the development of new photoresist chemistry. 1 fig.« less

Inventors:
Publication Date:
Research Org.:
Sandia National Labs., Albuquerque, NM (USA)
Sponsoring Org.:
USDOE; USDOE, Washington, DC (USA)
OSTI Identifier:
5843430
Patent Number(s):
PATENTS-US-A7430202
Application Number:
ON: DE91011673; PPN: US 7-430202
Assignee:
Dept. of Energy
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Patent Application
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; 37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; INTEGRATED CIRCUITS; FABRICATION; SALTS; PHOTOSENSITIVITY; ANTIMONATES; BROENSTED ACIDS; COMPOSITE MATERIALS; DYES; FLUORINE COMPOUNDS; INDICATORS; INVENTIONS; LAYERS; MICROELECTRONICS; PHOTOCHEMICAL REACTIONS; POLYMERS; SPATIAL RESOLUTION; SULFUR COMPOUNDS; ULTRAVIOLET RADIATION; ANTIMONY COMPOUNDS; CHEMICAL REACTIONS; ELECTROMAGNETIC RADIATION; ELECTRONIC CIRCUITS; HALOGEN COMPOUNDS; HYDROGEN COMPOUNDS; INORGANIC ACIDS; MATERIALS; MICROELECTRONIC CIRCUITS; OXYGEN COMPOUNDS; RADIATIONS; RESOLUTION; SENSITIVITY; 426000* - Engineering- Components, Electron Devices & Circuits- (1990-); 400500 - Photochemistry

Citation Formats

Renschler, C L. Static contrast enhancement layer for photolithographic processes. United States: N. p., 1989. Web.
Renschler, C L. Static contrast enhancement layer for photolithographic processes. United States.
Renschler, C L. 1989. "Static contrast enhancement layer for photolithographic processes". United States.
@article{osti_5843430,
title = {Static contrast enhancement layer for photolithographic processes},
author = {Renschler, C L},
abstractNote = {In the ever expanding microelectronic industry, there is a constant demand for improved photolithographic techniques useful in the manufacture of integrated circuits and the like. Over the years, however, the linewidths of structures patterned for microelectronic fabrication have continued to decrease. At present, 0.8 {mu}m lines and spaces are now imaged in commercial production and much smaller features are predicted for the near future. These feature sizes represent a significant drop below the previously predicted limit of optical lithography, originally thought to be around 1.25 {mu}m. These advances have been due in large part to the extensive worldwide research effort in improved optical patterning techniques. One of the more significant developments in optical patterning has been the advent of contrast enhancement layer lithography. A static stable contrast enhancement layer is provided for improving the resolution possible in photolithographic processes which comprises a photoacid generator such as an onium salt and acid-base indicator dye such as methyl yellow incorporated into a polymeric binder. The contrast enhancement layer is coated onto a conventional photoresist, and upon exposure to light in the appropriate absorption range, the salt undergoes a transformation to a strong Bronsted acid which will then bleach the indicator dye. The system is particularly designed so that an in situ contact mask is formed in a first deep UV exposure which is used to mask light projected upon the photoresist at a second wavelength. The present invention allows for exposure using deep UV sources without the need for the development of new photoresist chemistry. 1 fig.},
doi = {},
url = {https://www.osti.gov/biblio/5843430}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed Nov 01 00:00:00 EST 1989},
month = {Wed Nov 01 00:00:00 EST 1989}
}