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Title: The effect of distributed series resistance on the dark and illuminated current-voltage characteristics of solar cells

Journal Article · · IEEE Trans. Electron Devices; (United States)

Distributed series resistance effects in solar cells are analyzed and the correctness of representing these by a lumped parameter is discussed for any conditions of bias and illumination. In addition to a general mathematical methodology, analytical expressions are derived to simplify the estimation of series resistance effects on the dark and illuminated J-V characteristics of the cell. The equivalent series resistance (r/sub S/) in the dark is found to decrease with current density J from r/sub B/ + r/sub E//3 at small J to (r/sub E/r/sub B/)/sup 1/2/ at very high J, where r/sub E/ and r/sub B/ are the emitter layer and base region resistances, respectively. For illuminated conditions r/sub S/ depends on J as well, being maximum near short-circuit and minimum near open-circuit; however, r/sub S/ further depends on the photogenerated current J/sub L/: its short-circuit value increases with J/sub L/ from r/sub B/ + r/sub E//3 to r/sub B/ + r/sub E//2 and the open-circuit value decreases with J/sub L/ from r/sub B/ + r/sub E//3 to (r/sub E/r/sub B/)/sup 1/2/. The variability of r/sub S/ is therefore related to the relative importance of r/sub B/ and r/sub E/; r/sub B/ plays the role of attenuating this variability, a situation not well recognized previously. Previous theoretical and experimental work is critically reviewed throughout this paper.

Research Organization:
Departamento Electronica Fisica, ETSI Tele-communicacion, Universidad Politecnica de Madrid, 28040 Madrid
OSTI ID:
5838301
Journal Information:
IEEE Trans. Electron Devices; (United States), Vol. 33:3
Country of Publication:
United States
Language:
English