Photoresponsive semiconductor device having a double layer anti-reflective coating

Patent · Tue Jul 09 00:00:00 EDT 1985

OSTI ID:5838279

McGill, J

Disclosed is an improved dual layer anti-reflective coating for use in a photoresponsive semiconductor device, and a device incorporating the coating. The coating has a uniformly low parasitic absorbance in the range of about 475 to 600 nanometers. The dual layer has an incident light layer and an intermediate layer. The intermediate layer is formed of a silicon alloy material having at least one band gap widening element incorporated therein. The index of refraction of the intermediate layer has an index of refraction intermediate the indexes of the incident light layer and the underlying photoresponsive semiconductor device.

• Assignee: Energy Conversion Devices, Inc.
• Patent Number(s): US 4528418
• OSTI ID: 5838279
• Resource Relation: Patent File Date: Filed date 24 Feb 1984; Other Information: PAT-APPL-582984
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
SEMICONDUCTOR DEVICES
ANTIREFLECTION COATINGS
SILICON SOLAR CELLS
FABRICATION
ABSORPTIVITY
AMORPHOUS STATE
LAYERS
REFRACTION
THIN FILMS
COATINGS
DIRECT ENERGY CONVERTERS
EQUIPMENT
FILMS
OPTICAL PROPERTIES
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
SOLAR CELLS
SOLAR EQUIPMENT
140501* - Solar Energy Conversion- Photovoltaic Conversion