High attenuating external cavity for picosecond-tunable pulse generation from gain/Q-switched laser diodes

Journal Article · Tue Jun 01 00:00:00 EDT 1993 · IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/3.234423· OSTI ID:5826410

Bouchoule, S; Stelmakh, N; Cavelier, M; Lourtioz, J M ^[1]

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1. Univ. Paris XI, Orsay (France)

The authors analyze in detail the behavior of gain/Q-switched Fabry-Perot laser diodes coupled to a highly attenuating, selective external cavity. Radical differences are shown as compared to the case of strong external feedback used in mode locking. Actually, they evidence a strong analogy with the case of pulsed lasers with a small quasi-monochromatic injection signal. Unlike previous experiments on laser diodes with selective external cavity, strong chirping is observed in single-mode emission, leading to tunable picosecond pulses after compression. Experiments are carried out on two types of devices. Picosecond pulses with very high tunability (40 nm) and repetition rates ([gt]10 GHz) are obtained from 1.3 [mu]m gain-switched laser diodes, the minimum pulsewidth being 2.5 ps. Ultrashort ([approximately]1 ps), high-power ([gt]5 W) tunable pulses are achieved with 0.8 [mu]m Q-switched lasers.

• OSTI ID: 5826410
• Journal Information: IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States), Vol. 29:6; ISSN 0018-9197
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
LASER CAVITIES
LASER RADIATION
ELECTROMAGNETIC PULSES
EXPERIMENTAL DATA
GAIN
MODE SELECTION
Q-SWITCHING
TUNING
AMPLIFICATION
DATA
ELECTROMAGNETIC RADIATION
INFORMATION
LASERS
NUMERICAL DATA
PULSES
RADIATIONS
SEMICONDUCTOR DEVICES
SOLID STATE LASERS
426002* - Engineering- Lasers & Masers- (1990-)