High attenuating external cavity for picosecond-tunable pulse generation from gain/Q-switched laser diodes

Bouchoule, S; Stelmakh, N; Cavelier, M; Lourtioz, J M

doi:10.1109/3.234423

Title: High attenuating external cavity for picosecond-tunable pulse generation from gain/Q-switched laser diodes

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Abstract

The authors analyze in detail the behavior of gain/Q-switched Fabry-Perot laser diodes coupled to a highly attenuating, selective external cavity. Radical differences are shown as compared to the case of strong external feedback used in mode locking. Actually, they evidence a strong analogy with the case of pulsed lasers with a small quasi-monochromatic injection signal. Unlike previous experiments on laser diodes with selective external cavity, strong chirping is observed in single-mode emission, leading to tunable picosecond pulses after compression. Experiments are carried out on two types of devices. Picosecond pulses with very high tunability (40 nm) and repetition rates ([gt]10 GHz) are obtained from 1.3 [mu]m gain-switched laser diodes, the minimum pulsewidth being 2.5 ps. Ultrashort ([approximately]1 ps), high-power ([gt]5 W) tunable pulses are achieved with 0.8 [mu]m Q-switched lasers.

Authors:

Bouchoule, S; Stelmakh, N; Cavelier, M; Lourtioz, J M ^[1]

Univ. Paris XI, Orsay (France)

Publication Date:: 1993-06-01

OSTI Identifier:: 5826410

Resource Type:: Journal Article

Journal Name:: IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States)

Additional Journal Information:: Journal Volume: 29:6; Journal ID: ISSN 0018-9197

Country of Publication:: United States

Language:: English

Subject:: 42 ENGINEERING; SEMICONDUCTOR LASERS; LASER CAVITIES; LASER RADIATION; ELECTROMAGNETIC PULSES; EXPERIMENTAL DATA; GAIN; MODE SELECTION; Q-SWITCHING; TUNING; AMPLIFICATION; DATA; ELECTROMAGNETIC RADIATION; INFORMATION; LASERS; NUMERICAL DATA; PULSES; RADIATIONS; SEMICONDUCTOR DEVICES; SOLID STATE LASERS; 426002* - Engineering- Lasers & Masers- (1990-)

Citation Formats


                    Bouchoule, S, Stelmakh, N, Cavelier, M, and Lourtioz, J M. High attenuating external cavity for picosecond-tunable pulse generation from gain/Q-switched laser diodes.  United States: N. p., 1993. 
        Web.  doi:10.1109/3.234423.

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                    Bouchoule, S, Stelmakh, N, Cavelier, M, & Lourtioz, J M. High attenuating external cavity for picosecond-tunable pulse generation from gain/Q-switched laser diodes.  United States.  https://doi.org/10.1109/3.234423

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                    Bouchoule, S, Stelmakh, N, Cavelier, M, and Lourtioz, J M. 1993.  
        "High attenuating external cavity for picosecond-tunable pulse generation from gain/Q-switched laser diodes".  United States.  https://doi.org/10.1109/3.234423.

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@article{osti_5826410,

  title        = {High attenuating external cavity for picosecond-tunable pulse generation from gain/Q-switched laser diodes},

  author       = {Bouchoule, S and Stelmakh, N and Cavelier, M and Lourtioz, J M},

  abstractNote = {The authors analyze in detail the behavior of gain/Q-switched Fabry-Perot laser diodes coupled to a highly attenuating, selective external cavity. Radical differences are shown as compared to the case of strong external feedback used in mode locking. Actually, they evidence a strong analogy with the case of pulsed lasers with a small quasi-monochromatic injection signal. Unlike previous experiments on laser diodes with selective external cavity, strong chirping is observed in single-mode emission, leading to tunable picosecond pulses after compression. Experiments are carried out on two types of devices. Picosecond pulses with very high tunability (40 nm) and repetition rates ([gt]10 GHz) are obtained from 1.3 [mu]m gain-switched laser diodes, the minimum pulsewidth being 2.5 ps. Ultrashort ([approximately]1 ps), high-power ([gt]5 W) tunable pulses are achieved with 0.8 [mu]m Q-switched lasers.},

  doi          = {10.1109/3.234423},

  url          = {https://www.osti.gov/biblio/5826410},
  journal      = {IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States)},

  issn         = {0018-9197},

  number       = ,

  volume       = 29:6,

  place        = {United States},

  year         = {1993},

  month        = {6}

}

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https://doi.org/10.1109/3.234423

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