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Title: Picosecond photoconductors as radiation detectors

Conference · · IEEE Trans. Nucl. Sci.; (United States)
OSTI ID:5824241

The authors have developed a new class of extremely highspeed radiation detectors. They are simple and inexpensive to fabricate, rugged, and reliable. They have demonstrated their sensitivity to gamma-rays, x-rays, soft x-rays, charged particles, and light and have obtained response speeds of <100 ps. Their current response is proportional to incident-radiation intensity. The detectors are not used for detecting single particles or measuring particle energy. Their current response is due to the modulation of the conductance of the semiconductor crystal by transient-radiation events. The devices are fabricated from bulk-semiconductor crystals and achieve picosecond response by fast carrier relaxation in the crystals. Fast carrier relaxation is obtained by intentionally introducing trapping and recombination centers into the semiconductor crystal by impurity doping or radiation damage. Here the authors discuss the design, fabrication, and characterization of InP:Fe, GaAs, and neutron-damaged InP:Fe and GaAs photoconductive radiation detectors. They also present a model for transient response in InP:Fe photoconductors.

Research Organization:
Electronics Div., Los Alamos National Lab., Los Alamos, NM 87545
OSTI ID:
5824241
Report Number(s):
CONF-851009-
Journal Information:
IEEE Trans. Nucl. Sci.; (United States), Vol. NS-33:1; Conference: IEEE nuclear science symposium, San Francisco, CA, USA, 23 Oct 1985
Country of Publication:
United States
Language:
English