skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Sputtering from a liquid phase Ga-In eutectic alloy

Miscellaneous ·
OSTI ID:5818554

Sputtering experiments were performed with a liquid-phase Ga-In eutectic alloy target. The bulk composition of the eutectic alloy is 16.5 at% In, but thermodynamic surface-segregation results in a surface monolayer of >94 at% In. Angular distributions and partial sputtering yields were measured for 3, 25, and 50 keV Ar{sup +} bombardment. Comparison of the sputtered-flux composition with the alloy surface composition profile allowed calculation of the fraction of sputtered atoms originating from the first atomic layer. The result was found to be {approx}0.87 {plus minus} {sup 0.05}{sub 0.03} at 25 and 50 keV, and increased to 0.94 {plus minus} {sup 0.06}{sub 0.04} at 3 keV. The increase may reflect a decrease in the average energy of recoil atoms within collision cascades, because fewer second layer recoil atoms would be able to penetrate the surface layer. Low-energy (4-6 eV) secondary-ion mass spectra were measured for Ne{sup +}, Ar{sup +}, Kr{sup +}, and Xe{sup +} bombardment in the energy range of 25-250 keV. The intensity ratio I(In{sup +})/I(Ga{sup +}) was found to be independent of projectile energy, as expected from the collision cascade theory of sputtering. However, a systematic increase, of {approx}25%, was observed as the projectile mass was increased from that of Ne to that of Xe. This was estimated to correspond to an increase of 5% in the fraction of sputtered atoms originating from the first atomic layer. Molecular/atomic ion yield ratios were measured for 25-250 keV Ne{sup +}, Ar{sup +}, Kr{sup +}, and Xe{sup +} bombardment of Ga and In elemental standards, and were found to be nearly independent of both projectile energy and mass. A published theory based on the recombination of independently sputtered neutral constituents predicts a relative yield proportional to the sputtering yield.

Research Organization:
Yale Univ., New Haven, CT (USA)
OSTI ID:
5818554
Resource Relation:
Other Information: Thesis (Ph. D.)
Country of Publication:
United States
Language:
English