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Title: Characterization of deliberately nickel-doped silicon wafers and solar cells. JPL Publication 79-116

Abstract

Microstructural and electrical evaluation tests were performed on nickel-doped p-type silicon wafers before and after solar cell fabrication. The concentration levels of nickel in silicon were 5 x 10/sup 14/, 4 x 10/sup 15/, and 8 x 10/sup 15/ atoms/cm/sup 3/. It was found that nickel precipitated out during the growth process in all three ingots. Clumps of precipitates, some of which exhibited star shape, were present at different depths. If the clumps are distributed at depths approx. 20 ..mu..m apart and if they are larger than 10 ..mu..m in diameter, degradation occurs in solar cell electrical properties and cell conversion efficiency. The larger the size of the precipitate clump, the greater the degradation in solar cell efficiency. A large grain boundary around the cell effective area acted as a gettering center for the precipitates and impurities and caused improvement in solar cell efficiency. Details of the evaluation test results are given.

Authors:
Publication Date:
Research Org.:
Jet Propulsion Lab., Pasadena, CA (USA)
OSTI Identifier:
5817752
Report Number(s):
DOE/JPL/1012-34
DOE Contract Number:
EX-76-A-29-1012
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; SILICON; ELECTRICAL PROPERTIES; MICROSTRUCTURE; SILICON SOLAR CELLS; IMPURITIES; EFFICIENCY; EVALUATION; GRAIN BOUNDARIES; NICKEL ADDITIONS; OPTICAL MICROSCOPY; P-TYPE CONDUCTORS; PERFORMANCE; SCANNING ELECTRON MICROSCOPY; ALLOYS; CRYSTAL STRUCTURE; DIRECT ENERGY CONVERTERS; ELECTRON MICROSCOPY; ELEMENTS; MICROSCOPY; NICKEL ALLOYS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; PHYSICAL PROPERTIES; SEMICONDUCTOR MATERIALS; SEMIMETALS; SOLAR CELLS; 140501* - Solar Energy Conversion- Photovoltaic Conversion; 360603 - Materials- Properties

Citation Formats

Salama, A.M. Characterization of deliberately nickel-doped silicon wafers and solar cells. JPL Publication 79-116. United States: N. p., 1979. Web. doi:10.2172/5817752.
Salama, A.M. Characterization of deliberately nickel-doped silicon wafers and solar cells. JPL Publication 79-116. United States. doi:10.2172/5817752.
Salama, A.M. Thu . "Characterization of deliberately nickel-doped silicon wafers and solar cells. JPL Publication 79-116". United States. doi:10.2172/5817752. https://www.osti.gov/servlets/purl/5817752.
@article{osti_5817752,
title = {Characterization of deliberately nickel-doped silicon wafers and solar cells. JPL Publication 79-116},
author = {Salama, A.M.},
abstractNote = {Microstructural and electrical evaluation tests were performed on nickel-doped p-type silicon wafers before and after solar cell fabrication. The concentration levels of nickel in silicon were 5 x 10/sup 14/, 4 x 10/sup 15/, and 8 x 10/sup 15/ atoms/cm/sup 3/. It was found that nickel precipitated out during the growth process in all three ingots. Clumps of precipitates, some of which exhibited star shape, were present at different depths. If the clumps are distributed at depths approx. 20 ..mu..m apart and if they are larger than 10 ..mu..m in diameter, degradation occurs in solar cell electrical properties and cell conversion efficiency. The larger the size of the precipitate clump, the greater the degradation in solar cell efficiency. A large grain boundary around the cell effective area acted as a gettering center for the precipitates and impurities and caused improvement in solar cell efficiency. Details of the evaluation test results are given.},
doi = {10.2172/5817752},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Thu Nov 01 00:00:00 EST 1979},
month = {Thu Nov 01 00:00:00 EST 1979}
}

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