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Title: Structural and optical properties of homoepitaxial GaN layers

Abstract

The review of structural and optical properties of homoepitaxial layers grown by MOCVD on single crystals GaN substrates is presented. The TEM technique is used to characterize the structural properties of epi-layers. It is found that the structural properties of GaN homoepitaxial layers are determined by the polarity of the substrate surface on which the growth takes place. It is shown that threading dislocations are present only in the layers grown on the [0001] smooth surface. On the other hand the layers grown on the [0001] rough surface are free from vertical defects. The characteristic feature of the growth on the rough surface are pinholes. The optical properties of homoepitaxial layers are predominantly determined by the growth polarity as well. It is shown also that the reflectivity measurement is the most precise way to determine the exciton energies and that emissions due to free excitons are strongly affected by polariton effects.

Authors:
 [1];  [2];  [3]
  1. Univ. of Warsaw (Poland). Inst. of Experimental Physics
  2. Lawrence Berkeley National Lab., CA (United States). Centre for Advanced Materials
  3. Univ. of Warsaw (Poland). Inst. of Experimental Physics; and others
Publication Date:
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
581053
Report Number(s):
CONF-961202-
ISBN 1-55899-353-3; TRN: IM9807%%152
DOE Contract Number:  
AC03-76SF00098
Resource Type:
Conference
Resource Relation:
Conference: 1996 Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 2-6 Dec 1996; Other Information: PBD: 1997; Related Information: Is Part Of III-V nitrides; Ponce, F.A. [ed.] [Xerox Palo Alto Research Center, CA (United States)]; Moustakas, T.D. [ed.] [Boston Univ., MA (United States)]; Akasaki, I. [ed.] [Meijo Univ., Nagoya (Japan)]; Monemar, B.A. [ed.] [Linkoeping Univ. (Sweden)]; PB: 1278 p.; Materials Research Society symposium proceedings, Volume 449
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GALLIUM NITRIDES; CRYSTAL STRUCTURE; OPTICAL PROPERTIES; EPITAXY; CHEMICAL VAPOR DEPOSITION; LUMINESCENCE

Citation Formats

Baranowski, J M, Polish Academy of Sciences, Warsaw, Liliental-Weber, Z, and Korona, K. Structural and optical properties of homoepitaxial GaN layers. United States: N. p., 1997. Web.
Baranowski, J M, Polish Academy of Sciences, Warsaw, Liliental-Weber, Z, & Korona, K. Structural and optical properties of homoepitaxial GaN layers. United States.
Baranowski, J M, Polish Academy of Sciences, Warsaw, Liliental-Weber, Z, and Korona, K. Wed . "Structural and optical properties of homoepitaxial GaN layers". United States.
@article{osti_581053,
title = {Structural and optical properties of homoepitaxial GaN layers},
author = {Baranowski, J M and Polish Academy of Sciences, Warsaw and Liliental-Weber, Z and Korona, K},
abstractNote = {The review of structural and optical properties of homoepitaxial layers grown by MOCVD on single crystals GaN substrates is presented. The TEM technique is used to characterize the structural properties of epi-layers. It is found that the structural properties of GaN homoepitaxial layers are determined by the polarity of the substrate surface on which the growth takes place. It is shown that threading dislocations are present only in the layers grown on the [0001] smooth surface. On the other hand the layers grown on the [0001] rough surface are free from vertical defects. The characteristic feature of the growth on the rough surface are pinholes. The optical properties of homoepitaxial layers are predominantly determined by the growth polarity as well. It is shown also that the reflectivity measurement is the most precise way to determine the exciton energies and that emissions due to free excitons are strongly affected by polariton effects.},
doi = {},
url = {https://www.osti.gov/biblio/581053}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1997},
month = {12}
}

Conference:
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