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Title: Low-temperature deposition and characterization of Al{sub x}In{sub 1{minus}x}N thin films

Abstract

Thin III-V nitride semiconductors films are commonly prepared using metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). These methods often require high temperatures (800--1,000 C) for the films to grow epitaxially. In the present work, the authors deposited Al{sub x}In{sub 1{minus}x}N films on Si substrates by reactive magnetron sputtering method at low substrate temperature. The properties of the films have been studied by RBS, x-ray diffraction, and optical measurements. The Al{sub x}In{sub 1{minus}x}N films deposited at room temperature were confirmed to be crystalline by x-ray diffraction. Band gap energies of the Al{sub x}In{sub 1{minus}x}N alloys varies from 1.9 eV to 4.2 eV. the bandgap energy vs. lattice constant curve was constructed and confirmed to bow downwards.

Authors:
; ; ; ; ;  [1]
  1. Univ. of Delaware, Newark, DE (United States)
Publication Date:
OSTI Identifier:
581030
Report Number(s):
CONF-961202-
ISBN 1-55899-353-3; TRN: IM9807%%142
Resource Type:
Book
Resource Relation:
Conference: 1996 Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 2-6 Dec 1996; Other Information: PBD: 1997; Related Information: Is Part Of III-V nitrides; Ponce, F.A. [ed.] [Xerox Palo Alto Research Center, CA (United States)]; Moustakas, T.D. [ed.] [Boston Univ., MA (United States)]; Akasaki, I. [ed.] [Meijo Univ., Nagoya (Japan)]; Monemar, B.A. [ed.] [Linkoeping Univ. (Sweden)]; PB: 1278 p.; Materials Research Society symposium proceedings, Volume 449
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM NITRIDES; INDIUM NITRIDES; OPTICAL PROPERTIES; LATTICE PARAMETERS; SURFACE COATING; EXPERIMENTAL DATA

Citation Formats

Qiu, G, Olowolafe, J O, Peng, T, Unruh, K M, Swann, C P, and Piprek, J. Low-temperature deposition and characterization of Al{sub x}In{sub 1{minus}x}N thin films. United States: N. p., 1997. Web.
Qiu, G, Olowolafe, J O, Peng, T, Unruh, K M, Swann, C P, & Piprek, J. Low-temperature deposition and characterization of Al{sub x}In{sub 1{minus}x}N thin films. United States.
Qiu, G, Olowolafe, J O, Peng, T, Unruh, K M, Swann, C P, and Piprek, J. Wed . "Low-temperature deposition and characterization of Al{sub x}In{sub 1{minus}x}N thin films". United States.
@article{osti_581030,
title = {Low-temperature deposition and characterization of Al{sub x}In{sub 1{minus}x}N thin films},
author = {Qiu, G and Olowolafe, J O and Peng, T and Unruh, K M and Swann, C P and Piprek, J},
abstractNote = {Thin III-V nitride semiconductors films are commonly prepared using metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). These methods often require high temperatures (800--1,000 C) for the films to grow epitaxially. In the present work, the authors deposited Al{sub x}In{sub 1{minus}x}N films on Si substrates by reactive magnetron sputtering method at low substrate temperature. The properties of the films have been studied by RBS, x-ray diffraction, and optical measurements. The Al{sub x}In{sub 1{minus}x}N films deposited at room temperature were confirmed to be crystalline by x-ray diffraction. Band gap energies of the Al{sub x}In{sub 1{minus}x}N alloys varies from 1.9 eV to 4.2 eV. the bandgap energy vs. lattice constant curve was constructed and confirmed to bow downwards.},
doi = {},
url = {https://www.osti.gov/biblio/581030}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1997},
month = {12}
}

Book:
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